4,4,4-trifluoro-3-hydroxy-1-methyl-3-(trifluoromethyl)butyl acrylate | 859856-64-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 4,4,4-trifluoro-3-hydroxy-1-methyl-3-(trifluoromethyl)butyl acrylate
• 英文别名: 1,1,1-Trifluoro-2-trifluoromethyl-2-hydroxy-4-pentyl acrylate；[5,5,5-trifluoro-4-hydroxy-4-(trifluoromethyl)pentan-2-yl] prop-2-enoate
• CAS: 859856-64-7
• 化学式: C₉H₁₀F₆O₃
• 分子量: 280.167
• InChiKey: CNHBXPIOKOXEIV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  18
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  46.5
• 氢给体数：
  1
• 氢受体数：
  9

反应信息

• 作为产物：
  描述：

  2-烯丙六氟异丙醇 、 丙烯酸 在 三[(三氟代甲基)磺酰基]甲烷 作用下， 反应 10.0h， 以51.5%的产率得到4,4,4-trifluoro-3-hydroxy-1-methyl-3-(trifluoromethyl)butyl acrylate
  参考文献：
  名称：

  Process for Producing Monomer for Fluorinated Resist

  摘要：

  根据本发明，通过在特定酸性催化剂的存在下将α-取代丙烯酸直接加入到氟代烯烃中，可以生产用于氟代光刻胶的α-取代丙烯酸酯单体。通过使用这种特定的酸性催化剂，在发生烯烃异构化、生成二元醇和α-取代丙烯酸过量加入等副反应的同时，可以高效地进行氟代烯烃和α-取代丙烯酸的目标加成反应，从而实现α-取代丙烯酸酯单体的工业规模生产。

  公开号：

  US20120004444A1

文献信息

• FLUOROCARBOXYLIC ACID-CONTAINING MONOMER, FLUOROCARBOXYLIC ACID-CONTAINING POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20210341839A1

  公开（公告）日：2021-11-04

  A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone.

  提供一种含有氟羧酸的聚合物，其中包含具有式（A1）的重复单元，但不含有酸不稳定的重复单元。包含该聚合物的抗蚀剂组合物具有高灵敏度，并且无论是正向还是负向调色板，都不易出现纳米桥接或图案坍塌。
• Process for producing alpha-substituted acrylic acid esters
  申请人：Komata Takeo

  公开号：US20050165249A1

  公开（公告）日：2005-07-28

  A process for producing an α-substituted acrylic acid ester represented by the formula [1], wherein each of R 1 and R 2 is independently a hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, fluoromethyl group, difluoromethyl group, trifluoromethyl group, or perfluoroethyl group, includes reacting an α-substituted acrylic acid anhydride represented by the formula [7], with 1,1-bis(trifluoromethyl)-1,3-diol represented by the formula [2].

  生产α-取代丙烯酸酯的方法，其化学式为[1]，其中R1和R2分别独立地为氢原子、甲基、乙基、n-丙基、异丙基、n-丁基、sec-丁基、tert-丁基、氟甲基、二氟甲基、三氟甲基或全氟乙基，包括将化学式为[7]的α-取代丙烯酸酐与化学式为[2]的1,1-双(三氟甲基)-1,3-二醇反应。
• UPPER LAYER FILM FORMING COMPOSITION FOR LIQUID IMMERSION AND METHOD OF FORMING PHOTORESIST PATTERN
  申请人：JSR Corporation

  公开号：EP1708027B1

  公开（公告）日：2019-03-13
• Low activation energy dissolution modification agents for photoresist applications
  申请人：Allen David Robert

  公开号：US20070231734A1

  公开（公告）日：2007-10-04

  A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
• Resist polymer, preparing method, resist composition and patterning process
  申请人：Tachibana Seiichiro

  公开号：US20070264592A1

  公开（公告）日：2007-11-15

  A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.