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1,2,4,5-Tetrafluoro-3-tetradecoxybenzene | 1207682-20-9

中文名称
——
中文别名
——
英文名称
1,2,4,5-Tetrafluoro-3-tetradecoxybenzene
英文别名
——
1,2,4,5-Tetrafluoro-3-tetradecoxybenzene化学式
CAS
1207682-20-9
化学式
C20H30F4O
mdl
——
分子量
362.451
InChiKey
CBENUOITCJAGKF-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    9
  • 重原子数:
    25
  • 可旋转键数:
    14
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.7
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    5

反应信息

  • 作为反应物:
    参考文献:
    名称:
    Aromatic Fluorination Effect on the Mesomorphic Properties of Discotic Liquid Crystal of Alkoxybenzoyloxytriphenylene
    摘要:
    2,3,6,7,10,11-hexakis (4-alkyloxy-2,3,5,6-tetrafluorobenzoyloxy) triphenylenes (CnF4; n = 6, 7, 8, 9, 10, 12, 14, 16) and the branched peripheral chain derivative [C6(2C2)F4, C8(3,7C1)F4 and C7(1C1)F4] were synthesized to study the mesomorphic transition behavior by polarized optical microscope, DSC and XRD techniques. It was found that CnF4s exhibit Col(h) phase having a wide range of temperature, and the clearing points get slightly lowered as the peripheral chains are elongated. On the other hand, the stabilities of mesomorphism for CnF4s having the branched peripheral chains without C7(1C1)F4 larger then corresponding non-branched peripheral chain homologues. It was shown that the elongation of the peripheral chains and the introduction of branched structure into the chains give no change in the type of mesomorphism, implying a strong attractive interaction among the fluorinated phenyl groups.
    DOI:
    10.1080/15421400903065630
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文献信息

  • PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD
    申请人:Kamimura Sou
    公开号:US20110229832A1
    公开(公告)日:2011-09-22
    A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S 1 or S 2 as defined in the specification is used.
  • PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20150185610A1
    公开(公告)日:2015-07-02
    There is provided a pattern forming method comprising, in order, (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having specific repeating units, (2) a step of exposing the film by using an electron beam or an extreme-ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
  • PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20160041465A1
    公开(公告)日:2016-02-11
    The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
  • US8541161B2
    申请人:——
    公开号:US8541161B2
    公开(公告)日:2013-09-24
  • US9090722B2
    申请人:——
    公开号:US9090722B2
    公开(公告)日:2015-07-28
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同类化合物

(R)-3-(叔丁基)-4-(2,6-二异丙氧基苯基)-2,3-二氢苯并[d][1,3]氧杂磷杂环戊烯 (2S,3R)-3-(叔丁基)-2-(二叔丁基膦基)-4-甲氧基-2,3-二氢苯并[d][1,3]氧杂磷杂戊环 (2S,2''S,3S,3''S)-3,3''-二叔丁基-4,4''-二甲氧基-2,2'',3,3''-四氢-2,2''-联苯并[d][1,3]氧杂磷杂戊环 (2R,2''R,3R,3''R)-3,3''-二叔丁基-4,4''-二甲氧基-2,2'',3,3''-四氢-2,2''-联苯并[d][1,3]氧杂磷杂戊环 (2-氟-3-异丙氧基苯基)三氟硼酸钾 (+)-6,6'-{[(1R,3R)-1,3-二甲基-1,3基]双(氧)}双[4,8-双(叔丁基)-2,10-二甲氧基-丙二醇 麦角甾烷-6-酮,2,3,22,23-四羟基-,(2a,3a,5a,22S,23S)- 鲁前列醇 顺式6-(对甲氧基苯基)-5-己烯酸 顺式-铂戊脒碘化物 顺式-四氢-2-苯氧基-N,N,N-三甲基-2H-吡喃-3-铵碘化物 顺式-4-甲氧基苯基1-丙烯基醚 顺式-2,4,5-三甲氧基-1-丙烯基苯 顺式-1,3-二甲基-4-苯基-2-氮杂环丁酮 非那西丁杂质7 非那西丁杂质3 非那西丁杂质22 非那西丁杂质18 非那卡因 非布司他杂质37 非布司他杂质30 非布丙醇 雷诺嗪 阿达洛尔 阿达洛尔 阿莫噁酮 阿莫兰特 阿维西利 阿索卡诺 阿米维林 阿立酮 阿曲汀中间体3 阿普洛尔 阿普斯特杂质67 阿普斯特中间体 阿普斯特中间体 阿托西汀EP杂质A 阿托莫西汀杂质24 阿托莫西汀杂质10 阿托莫西汀EP杂质C 阿尼扎芬 阿利克仑中间体3 间苯胺氢氟乙酰氯 间苯二酚二缩水甘油醚 间苯二酚二异丙醇醚 间苯二酚二(2-羟乙基)醚 间苄氧基苯乙醇 间甲苯氧基乙酸肼 间甲苯氧基乙腈 间甲苯异氰酸酯