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1,2,4,5-Tetrafluoro-3-tetradecoxybenzene | 1207682-20-9

中文名称
——
中文别名
——
英文名称
1,2,4,5-Tetrafluoro-3-tetradecoxybenzene
英文别名
——
1,2,4,5-Tetrafluoro-3-tetradecoxybenzene化学式
CAS
1207682-20-9
化学式
C20H30F4O
mdl
——
分子量
362.451
InChiKey
CBENUOITCJAGKF-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    9
  • 重原子数:
    25
  • 可旋转键数:
    14
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.7
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    5

反应信息

  • 作为反应物:
    描述:
    二氧化碳1,2,4,5-Tetrafluoro-3-tetradecoxybenzene正丁基锂盐酸 作用下, 以 为溶剂, 生成 2,3,5,6-tetrafluoro-4-(tetradecyloxy)benzoic acid
    参考文献:
    名称:
    Aromatic Fluorination Effect on the Mesomorphic Properties of Discotic Liquid Crystal of Alkoxybenzoyloxytriphenylene
    摘要:
    2,3,6,7,10,11-hexakis (4-alkyloxy-2,3,5,6-tetrafluorobenzoyloxy) triphenylenes (CnF4; n = 6, 7, 8, 9, 10, 12, 14, 16) and the branched peripheral chain derivative [C6(2C2)F4, C8(3,7C1)F4 and C7(1C1)F4] were synthesized to study the mesomorphic transition behavior by polarized optical microscope, DSC and XRD techniques. It was found that CnF4s exhibit Col(h) phase having a wide range of temperature, and the clearing points get slightly lowered as the peripheral chains are elongated. On the other hand, the stabilities of mesomorphism for CnF4s having the branched peripheral chains without C7(1C1)F4 larger then corresponding non-branched peripheral chain homologues. It was shown that the elongation of the peripheral chains and the introduction of branched structure into the chains give no change in the type of mesomorphism, implying a strong attractive interaction among the fluorinated phenyl groups.
    DOI:
    10.1080/15421400903065630
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文献信息

  • PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD
    申请人:Kamimura Sou
    公开号:US20110229832A1
    公开(公告)日:2011-09-22
    A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S 1 or S 2 as defined in the specification is used.
  • PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20150185610A1
    公开(公告)日:2015-07-02
    There is provided a pattern forming method comprising, in order, (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having specific repeating units, (2) a step of exposing the film by using an electron beam or an extreme-ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
  • PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20160041465A1
    公开(公告)日:2016-02-11
    The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
  • US8541161B2
    申请人:——
    公开号:US8541161B2
    公开(公告)日:2013-09-24
  • US9090722B2
    申请人:——
    公开号:US9090722B2
    公开(公告)日:2015-07-28
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