Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
从微电子装置上选择性去除相对于
金属
锗化物(如
镍锗)、
金属-III-V材料和
锗的未反应
金属材料(如未反应
镍)的组合物和方法。这些组合物与微电子设备上的其他材料(如低 K 电介质和
氮化硅)基本兼容。