申请人:Entegris, Inc.
公开号:US10340150B2
公开(公告)日:2019-07-02
Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
从微电子装置上选择性去除相对于金属锗化物(如镍锗)、金属-III-V材料和锗的未反应金属材料(如未反应镍)的组合物和方法。这些组合物与微电子设备上的其他材料(如低 K 电介质和氮化硅)基本兼容。