Ethanonaphthoporphyrins with a halogen atom at the zeta position were prepared by the [3+1] porphyrin synthesis of halogen-substituted ethanobenz[f]isoindole with a tripyrrane derivative. The halogeno porphyrins were converted to the corresponding ethynyl and pinacolatoboronyl compounds by Sonogashira and borylation reactions, respectively. Suzuki, Sonogashira, and Glaser coupling reactions of these ethanonaphthoporphyrins gave bis-porphyrins connected with no atom, acetylene, and butadiyne, respectively. Retro Diels-Alder reaction of these bis-porphyrins brought about the conversion of bicyclo[2.2.2]octadiene (BCOD) to benzene moieties to give bis-naphthoporphyrins, quantitatively.
Ethanonaphthoporphyrins with a halogen atom at the zeta position were prepared by the [3+1] porphyrin synthesis of halogen-substituted ethanobenz[f]isoindole with a tripyrrane derivative. The halogeno porphyrins were converted to the corresponding ethynyl and pinacolatoboronyl compounds by Sonogashira and borylation reactions, respectively. Suzuki, Sonogashira, and Glaser coupling reactions of these ethanonaphthoporphyrins gave bis-porphyrins connected with no atom, acetylene, and butadiyne, respectively. Retro Diels-Alder reaction of these bis-porphyrins brought about the conversion of bicyclo[2.2.2]octadiene (BCOD) to benzene moieties to give bis-naphthoporphyrins, quantitatively.
Synthesis of π-conjugated asymmetric aza-BODIPYs via nitrosobicyclopyrroles
作者:Ryota Mori、Minenari Asakura、Yukinori Kobayashi、Hiromu Mashimo、Makoto Roppongi、Satoshi Ito
DOI:10.1016/j.tetlet.2022.153759
日期:2022.4
π-Conjugated aza-BODIPYs with absorption in the near-infrared region have attracted attention, but there are few reports of their synthesis. We report the synthesis and absorption properties of π-conjugated asymmetricaza-BODIPYs by nitrosation and retro-Diels-Alder reaction of bicyclo[2.2.2]octadiene-fused bicyclopyrroles. We also synthesized aza-BODIPY fused with [2.3]naphtho and [2.3]anthra structures
Field effect transistor and method of producing the same
申请人:Miura Daisuke
公开号:US20060099732A1
公开(公告)日:2006-05-11
A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum metediar of 1 μm or more, wherein R
1
and R
2
each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R
3
denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.