2-phenylsulfonyl-1,4-dihydro-1,4-ethanonaphthalene | 287378-36-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 四氢化萘
• 英文名称: 2-phenylsulfonyl-1,4-dihydro-1,4-ethanonaphthalene
• 英文别名: 1,4-Dihydro-2-phenylsulfony-1,4-ethanonaphthalene；9-(benzenesulfonyl)tricyclo[6.2.2.02,7]dodeca-2,4,6,9-tetraene
• CAS: 287378-36-3
• 化学式: C₁₈H₁₆O₂S
• 分子量: 296.39
• InChiKey: NZTOXOVALRGNNM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  21
• 可旋转键数：
  2
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  42.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2-phenylsulfonyl-1,4-dihydro-1,4-ethanonaphthalene 在 potassium tert-butylate 、 potassium hydroxide 作用下， 以 四氢呋喃 、 乙二醇 为溶剂， 反应 10.0h， 生成 4,9-dihydro-4,9-ethano-2H-benz[f]isoindole
  参考文献：
  名称：

  SYNTHESIS OF BIS-nAPHTHOPORPHYRINS

  摘要：

  Ethanonaphthoporphyrins with a halogen atom at the zeta position were prepared by the [3+1] porphyrin synthesis of halogen-substituted ethanobenz[f]isoindole with a tripyrrane derivative. The halogeno porphyrins were converted to the corresponding ethynyl and pinacolatoboronyl compounds by Sonogashira and borylation reactions, respectively. Suzuki, Sonogashira, and Glaser coupling reactions of these ethanonaphthoporphyrins gave bis-porphyrins connected with no atom, acetylene, and butadiyne, respectively. Retro Diels-Alder reaction of these bis-porphyrins brought about the conversion of bicyclo[2.2.2]octadiene (BCOD) to benzene moieties to give bis-naphthoporphyrins, quantitatively.

  DOI：

  10.3987/com-12-s(n)50
• 作为产物：
  描述：

  1,3-环己二烯 在 1,8-二氮杂双环[5.4.0]十一碳-7-烯 、 间氯过氧苯甲酸 、 三氟乙酸 、 亚硝酸异戊酯 作用下， 以 四氢呋喃 、 二氯甲烷 为溶剂， 反应 7.0h， 生成 2-phenylsulfonyl-1,4-dihydro-1,4-ethanonaphthalene
  参考文献：
  名称：

  SYNTHESIS OF BIS-nAPHTHOPORPHYRINS

  摘要：

  Ethanonaphthoporphyrins with a halogen atom at the zeta position were prepared by the [3+1] porphyrin synthesis of halogen-substituted ethanobenz[f]isoindole with a tripyrrane derivative. The halogeno porphyrins were converted to the corresponding ethynyl and pinacolatoboronyl compounds by Sonogashira and borylation reactions, respectively. Suzuki, Sonogashira, and Glaser coupling reactions of these ethanonaphthoporphyrins gave bis-porphyrins connected with no atom, acetylene, and butadiyne, respectively. Retro Diels-Alder reaction of these bis-porphyrins brought about the conversion of bicyclo[2.2.2]octadiene (BCOD) to benzene moieties to give bis-naphthoporphyrins, quantitatively.

  DOI：

  10.3987/com-12-s(n)50

文献信息

• Field effect transistor and method of producing the same
  申请人：Miura Daisuke

  公开号：US20060099732A1

  公开（公告）日：2006-05-11

  A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum metediar of 1 μm or more, wherein R 1 and R 2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R 3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

  提供一种具有高场效迁移率的场效应晶体管，该晶体管可以通过简单的方法获得。该场效应晶体管包括由公式（1）表示的卟啉化合物的涂层膜通过加热转化得到的由公式（2）表示的萘卟啉化合物的结晶薄膜组成的有机半导体层，该有机半导体层具有最大晶粒直径为1μm或更大的晶粒，其中R1和R2各自独立地表示氢、卤素、羟基和具有1至12个碳原子的烷基中的至少一种；R3表示氢原子和芳基中的至少一种；M表示两个氢原子、金属原子或金属氧化物。
• [EN] FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING THE SAME<br/>[FR] TRANSISTOR À EFFET DE CHAMP ET PROCÉDÉ DE PRODUCTION
  申请人：CANON KK

  公开号：WO2004087836A1

  公开（公告）日：2004-10-14

  A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum diameter of 1 mm or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.