2-oxohexahydropyrimidin-5-yl methacrylate | 1355393-90-6

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪类
• 英文名称: 2-oxohexahydropyrimidin-5-yl methacrylate
• 英文别名: (2-Oxo-1,3-diazinan-5-yl) 2-methylprop-2-enoate
• CAS: 1355393-90-6
• 化学式: C₈H₁₂N₂O₃
• 分子量: 184.195
• InChiKey: JUHNUAFITKACJO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.1
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  67.4
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  2-oxohexahydropyrimidin-5-yl methacrylate 、 氯甲基甲基醚 在 N,N-二异丙基乙胺 、 sodium iodide 作用下， 以 乙腈 为溶剂， 反应 5.0h， 以51%的产率得到1 ,3-bismethoxymethyl-2-oxohexahydropyrimidin-5-ylmethacrylate
  参考文献：
  名称：

  ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND

  摘要：

  该组合物包含一种碱溶性树脂和一种由下列通式（I）表示的交联剂。在该式中，R1和R6各自独立地表示氢原子或具有5个或更少碳原子的碳氢基团；R2和R5各自独立地表示烷基、环烷基、芳基或酰基；R3和R4各自独立地表示氢原子或具有2个或更多碳原子的有机基团，且R3和R4可以结合形成环。

  公开号：

  US20160280621A1
• 作为产物：
  描述：

  甲基丙烯酸酐 在 NaOH 作用下， 以 四氢呋喃 、 异丙醚 、 水 、 乙腈 为溶剂， 以60%的产率得到2-oxohexahydropyrimidin-5-yl methacrylate
  参考文献：
  名称：

  Polymer, chemically amplified negative resist composition, and patterning process

  摘要：

  公开号：

  EP2412733B1

文献信息

• POLYMERIZABLE MONOMERS
  申请人：Domon Daisuke

  公开号：US20120029193A1

  公开（公告）日：2012-02-02

  A monomer of formula (1) is provided wherein R 1 is hydrogen or a monovalent C 1 -C 6 hydrocarbon group, and R 2 is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.

  提供了一个式子为（1）的单体，其中R1是氢或一价的C1-C6碳氢基团，R2是具有聚合功能的基团。使用这种单体，可以将交联单元并入聚合物链中。具有交联单元的基聚合物的化学放大负性光阻组合物具有高灵敏度，并形成具有最小LER的光阻图案。
• Polymerizable monomers
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2413192A1

  公开（公告）日：2012-02-01

  A monomer of formula (1) is provided wherein R1 is hydrogen or a monovalent C1-C6 hydrocarbon group, and R2 is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.

  提供了式 (1) 单体，其中 R1 是氢或一价 C1-C6 烃基，R2 是具有聚合官能度的基团。使用该单体可将交联单元加入聚合物链中。化学放大阴性抗蚀剂组合物由含有交联单元的基础聚合物组成，具有高灵敏度，可形成具有最小 LER 的抗蚀图案。
• Chemically amplified negative resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2492747A2

  公开（公告）日：2012-08-29

  A polymer comprising 0.5-10 mol% of recurring units having acid generating capability and 50-99.5 mol% of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

  一种聚合物由 0.5-10 摩尔%的具有酸生成能力的递归单元和 50-99.5 摩尔%的可溶于碱性显影剂的递归单元组成，可用于配制化学放大负抗蚀剂组合物。在光刻工艺中使用时，该组合物可确保有效的灵敏度，使产生酸的成分在光刻胶膜中的分布和扩散更加均匀，并抑制酸在基底界面上的失活。图案可以形成轮廓，从而提高 LER 和底切效果。
• POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20120028190A1

  公开（公告）日：2012-02-02

  A polymer is provided comprising recurring units having a N,N′-bis(alkoxymethyl)tetrahydropyrimidinone or N,N′-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20120219887A1

  公开（公告）日：2012-08-30

  A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.