The present invention provides a positive resist fluid excellent in the storage stability of the fluid and in defocus latitude depended on line pitch, and a positive photoresist composition for far ultraviolet exposure which forms a resist pattern having excellent defocus latitude depended on line pitch and has excellent sensitivity to short-wavelength exposure lights. The positive resist fluid comprises a resin which contains repeating units represented by formula (I) as defined in the specification, a photo-acid generator, and a solvent and the positive photoresist composition for far ultraviolet exposure comprises a resin which contains both alkali-soluble groups protected by groups containing an alicyclic hydrocarbon structure and represented by at least one of formulae (pI) to (pVI) and groups represented by formula (qI): —A—X—R
5
as defined in the specification.
本发明提供了一种具有优异流体储存稳定性和依赖于线间距离的离焦容限的正性光阻液体,以及用于远紫外线曝光的正性光阻组合物,该组合物形成具有依赖于线间距离的优异离焦容限的阻抗图案,并对短波长曝光光具有优异的敏感性。该正性光阻液体包括根据规范中定义的式(I)表示的重复单元的
树脂、光酸发生剂和溶剂,而用于远紫外线曝光的正性光阻组合物包括
树脂,该
树脂包含由至少一个式(pI)到式(pVI)之一表示的含有脂
环烃结构的基团保护的碱溶性基团和由式(qI)表示的基团:—A—X—R5。