2-(p-Anisyl)-2-propanethiol | 73396-86-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-(p-Anisyl)-2-propanethiol
• 英文别名: 2-(4-Methoxyphenyl)propane-2-thiol；2-(4-methoxyphenyl)propane-2-thiol
• CAS: 73396-86-8
• 化学式: C₁₀H₁₄OS
• 分子量: 182.287
• InChiKey: WTWPQCBLFVZNMO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  12
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  10.2
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  苯亚磺酰氯 、 2-(p-Anisyl)-2-propanethiol 以14%的产率得到1-(p-Anisyl)-1-methylethyl benzenethiosulfinate
  参考文献：
  名称：

  Acid-catalyzed decomposition of 1-aryl-1-methylethyl benzenethiosulfinates. A search for neighboring-group participation in acid-catalyzed decomposition of thiosulfinates

  摘要：

  DOI：

  10.1021/jo01300a050
• 作为产物：
  描述：

  2-(4-甲氧基苯基)丙-2-醇 在 硫酸 、 硫化氢 作用下， 以 溶剂黄146 为溶剂， 反应 0.75h， 以79%的产率得到2-(p-Anisyl)-2-propanethiol
  参考文献：
  名称：

  Acid-catalyzed decomposition of 1-aryl-1-methylethyl benzenethiosulfinates. A search for neighboring-group participation in acid-catalyzed decomposition of thiosulfinates

  摘要：

  DOI：

  10.1021/jo01300a050

文献信息

• Substituted pyrazino[1′,2′:1 ,5]pyrrolo[2,3-b]indole-1,4-diones for cancer treatment
  申请人：Massachusetts Institute of Technology

  公开号：US10220099B2

  公开（公告）日：2019-03-05

  The synthesis of various pyrazino[1′,2′:1,5]pyrrolo[2,3-b]-indole-1,4-dione analogs has been successfully implemented in the present application. From these efforts, compounds having the structure of Formula I-c: or a pharmaceutically acceptable salt, tautomer, or stereoisomer thereof, wherein R1, R2, R4-R8, R3′, R6′, and n are as defined herein, are provided. These biologically active derivatives have been further used to prepare cell-specific drug conjugates effective in treating various diseases including cancer.

  本申请成功合成了各种吡嗪并[1′,2′:1,5]吡咯并[2,3-b]-吲哚-1,4-二酮类似物。通过这些努力，制备出了具有式 I-c 结构的化合物： 或其药学上可接受的盐、同系物或立体异构体，其中 R1、R2、R4-R8、R3′、R6′ 和 n 如本文所定义。这些具有生物活性的衍生物已被进一步用于制备细胞特异性药物共轭物，可有效治疗包括癌症在内的各种疾病。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150086912A1

  公开（公告）日：2015-03-26

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.
• RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170059990A1

  公开（公告）日：2017-03-02

  A radiation-sensitive or actinic ray-sensitive resin composition contains a polymer compound (A) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain and a repeating unit (b) that is represented by the following Formula (I), in the formula, R 3 represents a hydrogen atom, an organic group, or a halogen atom, A 1 represents an aromatic ring group or an alicyclic group. R 1 and R 2 each independently represent an alkyl group, a cycloalkyl group, or an aryl group, at least two of A 1 , R 1 , or R 2 may be bonded to each other to form a ring. B 1 and L 1 each independently represent a single bond or a divalent linking group, X represents a hydrogen atom or an organic group, n represents an integer of 1 or greater.
• PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
  申请人：FUJIFILM Corporation

  公开号：US20170121437A1

  公开（公告）日：2017-05-04

  A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).
• TETRAHYDRONAPHTHYRIDINE DERIVATIVES AS mGluR2-NEGATIVE ALLOSTERIC MODULATORS, COMPOSITIONS, AND THEIR USE
  申请人：Merck Sharp & Dohme Corp.

  公开号：US20170305902A1

  公开（公告）日：2017-10-26

  The present invention provides quinoline carboxamide and quinoline carbonitrile compounds of formula (I) or a pharmaceutically acceptable salt thereof, wherein R 1 , R 2 , L, X 1 , X 2 , and X 3 , are as defined herein. The compounds of the invention, and pharmaceutically acceptable salts thereof, and pharmaceutical compositions comprising them, are useful as non-competitive mGluR2 antagonists, or mGluR2 negative allosteric modulators (NAMs), and may be useful in methods of treating a person in need thereof for diseases or disorders in which the mGluR2-NAM receptor plays a causative role, such as Alzheimer's disease, cognitive impairment, schizophrenia and other mood disorders, pain disorders and sleep disorders.