Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device
申请人:FUJIFILM Corporation
公开号:US10014474B2
公开(公告)日:2018-07-03
The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
本发明提供了一种用于形成栅极绝缘膜的组合物,它能在不大大降低有机薄膜晶体管、有机薄膜晶体管、电子纸和显示装置的迁移率的情况下提高有机薄膜晶体管的绝缘可靠性。本发明用于形成栅极绝缘膜的组合物含有一种绝缘材料和一种迁移抑制剂,该迁移抑制剂选自由式(1)至(8)中任一式所代表的化合物、含有式(A)所代表的重复单元的聚合物化合物(X)和含有式(B)所代表的重复单元和式(C)所代表的重复单元的聚合物化合物(Y)组成的组。