Composition for forming resist underlayer film and method for forming resist pattern using same
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US10844167B2
公开(公告)日:2020-11-24
A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent:
wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.
一种用于形成抗蚀剂底层膜的组合物,该抗蚀剂底层膜具有较高的干蚀刻率,在曝光期间可用作抗反射涂层,并可填充具有较窄空间和较高长宽比的凹槽。一种用于形成抗蚀剂底层膜的组合物包含具有下式(1)结构单元的共聚物、可交联化合物、交联催化剂和溶剂:
其中 R1 和 R2 各自独立地为 C1-3 亚烷基或单键,Z 为 -O- 基团、-S- 基团或 -S-S- 基团,Ar 为芳基。该共聚物是通过具有-O-基团、-S-基团或-S-S-基团的二羧酸化合物的羧基与具有芳烯基团的二缩水甘油醚化合物的环氧基反应合成的。