Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist.
提供了保护在3位的N-
乙烯基内酰胺衍
生物的共聚物,其
化学式如下所示。这些共聚物被用作适用于深紫外光刻工艺的光阻材料,因此可以获得高灵敏度和分辨率。此外,可以通过使用光阻材料形成超细电路,并实现PED稳定性的显着提高。