3',4'-dinitro-3,3"-dioctyl-2,2',5',2"-terthiophene | 1145989-73-6

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 双噻吩和低聚噻吩
• 英文名称: 3',4'-dinitro-3,3"-dioctyl-2,2',5',2"-terthiophene
• 英文别名: 3',4'-dinitro-3,3''-dioctyl-2,2':5',2''-terthiophene；3,4-Dinitro-2,5-bis(3-octylthiophen-2-yl)thiophene
• CAS: 1145989-73-6
• 化学式: C₂₈H₃₈N₂O₄S₃
• 分子量: 562.819
• InChiKey: GTVYRVRGFIMJHL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  12.1
• 重原子数：
  37
• 可旋转键数：
  16
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.57
• 拓扑面积：
  176
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  3',4'-dinitro-3,3"-dioctyl-2,2',5',2"-terthiophene 在 盐酸 、 tin(II) chloride dihdyrate 作用下， 以 乙醇 为溶剂， 生成 5,7-bis(3-octylthiophen-2-yl)-2,3-diphenylthieno[3,4-b]pyrazine
  参考文献：
  名称：

  Synthesis and characterization of triphenylamine-based polymers and their application towards solid-state electrochromic cells

  摘要：

  基于三苯胺的新分子已被合成用于电致变色电池。我们实现了PJK1的颜色变化，从橙色变为深绿色；PJK2从浅黄色变为红棕色；PJK3从浅蓝色变为灰色；以及PJK4从绿色变为蓝绿色。

  DOI：

  10.1039/c6ra12112h
• 作为产物：
  描述：

  2-溴-3-辛基噻吩 在 钯 、 magnesium 作用下， 以 四氢呋喃 、 甲苯 为溶剂， 生成 3',4'-dinitro-3,3"-dioctyl-2,2',5',2"-terthiophene
  参考文献：
  名称：

  Synthesis and characterization of triphenylamine-based polymers and their application towards solid-state electrochromic cells

  摘要：

  基于三苯胺的新分子已被合成用于电致变色电池。我们实现了PJK1的颜色变化，从橙色变为深绿色；PJK2从浅黄色变为红棕色；PJK3从浅蓝色变为灰色；以及PJK4从绿色变为蓝绿色。

  DOI：

  10.1039/c6ra12112h

文献信息

• 트리페닐아민 화합물, 이의 고분자 및 이를 포함하는 전계변색 소자
  申请人：The Industry & Academic Cooperation in Chungnam National University (IAC) 충남대학교산학협력단(220040084104) BRN ▼314-82-09264

  公开号：KR20180017709A

  公开（公告）日：2018-02-21

  본 발명은, 트리페닐아민 화합물, 이의 고분자 및 이를 포함하는 전계변색 소자에 관한 것으로, 하기의 화학식 1로 표시되는 트리페닐아민 화합물, 이의 고분자 및 이를 포함하는 전계변색 소자에 관한 것이다. [화학식 1] (여기서, R, R1, R2, R3, R4, 및 R5는, 청구항 제1항에 정의된 바와 같다.)

  本发明涉及三苯胺化合物、其高分子以及包含其的全彩变色元件，其中所述三苯胺化合物表示为化学式1，涉及三苯胺化合物、其高分子以及包含其的全彩变色元件。【化学式1】（在此，R、R1、R2、R3、R4和R5如权利要求1所定义。）
• [EN] ACENAPHTHYLENE IMIDE-DERIVED SEMICONDUCTORS<br/>[FR] SEMI-CONDUCTEURS DÉRIVÉS D'ACÉNAPHTHYLÈNE IMIDE
  申请人：UNIV WASHINGTON CT COMMERCIALI

  公开号：WO2014031750A1

  公开（公告）日：2014-02-27

  Novel acenaphthylene imide-derived semiconductor materials, including small molecule compounds, polymers and oligomers. Also provided are methods for making the novel semiconductor materials and the use of the novel semiconducting materials in electronic or optoelectronic device. In some embodiments, the novel semiconducting materials are used as n-channel component in organic field-effect transistors as well as complementary electronic circuits including inverters. High mobility can be achieved.

  新型蒽醌衍生半导体材料，包括小分子化合物、聚合物和寡聚物。还提供了制备新型半导体材料的方法以及在电子或光电子器件中使用新型半导体材料的方法。在一些实施例中，新型半导体材料被用作有机场效应晶体管中的n型通道组件，以及包括反相器在内的互补电子电路。可以实现高迁移率。
• ACENAPHTHYLENE IMIDE-DERIVED SEMICONDUCTORS
  申请人：University of Washington Through its Center for Commercialization

  公开号：US20150243906A1

  公开（公告）日：2015-08-27

  Novel acenaphthylene imide-derived semiconductor materials, including small molecule compounds, polymers and oligomers. Also provided are methods for making the novel semiconductor materials and the use of the novel semiconducting materials in electronic or optoelectronic device. In some embodiments, the novel semiconducting materials are used as n-channel component in organic field-effect transistors as well as complementary electronic circuits including inverters. High mobility can be achieved.

  提供了一种新的基于乙酰萘亚胺的半导体材料，包括小分子化合物、聚合物和寡聚物。还提供了制备新型半导体材料的方法以及在电子或光电器件中使用新型半导体材料的用途。在某些实施例中，新型半导体材料被用作有机场效应晶体管中的n型组件，以及包括反相器在内的互补电子电路。可以实现高迁移率。
• Small Band Gap Oligothieno[3,4-<i>b</i>]pyrazines
  作者：Bram P. Karsten、René A. J. Janssen

  DOI：10.1021/ol8012638

  日期：2008.8.21

  The synthesis and the optical and electrochemical properties of thiophene end capped oligo(2,3-alkylthieno[3,4-b]pyrazine)s are presented. The optical absorption rapidly shifts to lower energies with increasing chain length, caused in almost equal amounts by a rise of the HOMO and a lowering of the LUMO levels. The optical band gap of the polymer is estimated to be 1.13 +/- 0.07 eV. Extrapolated redox potentials indicate that the polymer is a small band gap p-type material.
• US9508937B2
  申请人：——

  公开号：US9508937B2

  公开（公告）日：2016-11-29