N-methyl-norbornane-2,3-dicarboximide | 75598-55-9

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 异吲哚及其衍生物
• 英文名称: N-methyl-norbornane-2,3-dicarboximide
• 英文别名: 2-methyl-hexahydro-4,7-methano-isoindole-1,3-dione；4-Methyl-4-azatricyclo[5.2.1.02,6]decane-3,5-dione
• CAS: 75598-55-9
• 化学式: C₁₀H₁₃NO₂
• 分子量: 179.219
• InChiKey: NDFOKPXSRHTKGQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  37.4
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  N-methyl-norbornane-2,3-dicarboximide 以 乙腈 为溶剂， 反应 3.0h， 以36%的产率得到N-methylnorbornane-2,2-dicarboximide
  参考文献：
  名称：

  Photochemistry of aliphatic imides. Synthesis of azetidine-2,4-diones via photochemical isomerization of succinimides and N-formyl-N-methyl .alpha.,.beta.-unsaturated amides

  摘要：

  DOI：

  10.1021/jo00314a006
• 作为产物：
  描述：

  5-降冰片烯-2,3-二甲酰亚胺 在 palladium on activated charcoal 氢气 作用下， 生成 N-methyl-norbornane-2,3-dicarboximide
  参考文献：
  名称：

  Photochemistry of aliphatic imides. Synthesis of azetidine-2,4-diones via photochemical isomerization of succinimides and N-formyl-N-methyl .alpha.,.beta.-unsaturated amides

  摘要：

  DOI：

  10.1021/jo00314a006

文献信息

• Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20100119970A1

  公开（公告）日：2010-05-13

  There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

  揭示了一种抗性下层组合物，配置为在光刻中使用的多层抗性方法中使用，用于形成低于作为抗性上层膜的光刻胶层的一层，其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式（1）表示的酸的热酸发生剂。 可以提供一种抗性下层组合物，用于多层抗性方法（特别是双层抗性方法和三层抗性方法），该组合物用于形成低于作为抗性上层膜的光刻胶层的一层，该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
• Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method
  申请人：Central Glass Company, Limited

  公开号：US20130130175A1

  公开（公告）日：2013-05-23

  A sulfonic acid onium salt represented by the following formula (1) useful as a superior radiosensitive acid generator for resist compositions. It is possible to form a good pattern by using a resist composition containing this sulfonic acid onium salt corresponding to the formula (1): in which R 1 represents a monovalent organic group, and Q + represents a sulfonium cation or iodonium cation.

  以下是用作优良的辐射敏感性酸发生剂的磺酸醋銨盐的化学式（1）。通过使用含有与化学式（1）对应的磺酸醋銨盐的抗蚀组合物，可以形成良好的图案： 其中R1代表一价有机基团，Q+代表磺銨阳离子或碘銨阳离子。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20090246694A1

  公开（公告）日：2009-10-01

  Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基，R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20090061358A1

  公开（公告）日：2009-03-05

  Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R 1 —COOCH(CF 3 )CF 2 SO 3 + H + (1a) R 1 —O—COOCH(CF 3 )CF 2 SO 3 − H + (1c) R 1 is a C 20 -C 50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）或（1c）的磺酸。R1—COOCH(CF3)CF2SO3+H+(1a)R1—O—COOCH(CF3)CF2SO3−H+(1c)R1是具有类固醇结构的C20-C50烃基。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• Novel photoacid generators, resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20080085469A1

  公开（公告）日：2008-04-10

  Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R 1 —COOCH(CF 3 )CF 2 SO 3 − H + (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R 1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R 1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。RC(═O)R1—COOCH(CF3)CF2SO3−H+(1a)中，R为羟基、烷基、芳基、杂芳基、烷氧基、芳氧基或杂芳氧基，R1为可能含有杂原子（O、N或S）取代基的二价有机基团，或R1可与R形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物中的使用。