An anthracene derivative having at least two groups of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, alkyl, alkoxy, etc., is particular effective for forming an antireflection coating for preventing multiple reflection of exposing light from a highly reflective substrate, etc.
Process for forming a pattern on a semiconductor substrate using a deep
申请人:Wako Pure Chemical Industries, Ltd.
公开号:US05677112A1
公开(公告)日:1997-10-14
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.