摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

tris(4-hydroxyphenyl)sulphonium | 88101-75-1

中文名称
——
中文别名
——
英文名称
tris(4-hydroxyphenyl)sulphonium
英文别名
Tris(4-hydroxyphenyl)sulfonium;tris(4-hydroxyphenyl)sulfanium
tris(4-hydroxyphenyl)sulphonium化学式
CAS
88101-75-1
化学式
C18H15O3S
mdl
——
分子量
311.381
InChiKey
XUWXFPUSCUUNPR-UHFFFAOYSA-O
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.5
  • 重原子数:
    22
  • 可旋转键数:
    3
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    61.7
  • 氢给体数:
    3
  • 氢受体数:
    3

反应信息

  • 作为反应物:
    参考文献:
    名称:
    三(4-叔丁氧基羰基氧基苯基)sulph盐的光解。机械研究
    摘要:
    用紫外线在乙腈或二甲基亚砜溶液中辐照结构为Ar 3 S + X –(X –:CF 3 SO 3 –或AsF 6 –)的三(4-叔丁氧基羰基氧基苯基))盐。通过离子对色谱(IPC),1 H NMR测量和红外光谱进行的产物分析表明,同时形成了双(4-叔丁氧基羰基氧基苯基)硫化物,Ar 2 S和质子酸(CF 3 SO 3 H或HAsF 6)。 。后者催化了在室温下在无水的情况下碳酸叔丁酯基团。在水的存在下,酸解离,从而形成H 3 O +离子,仅在升高的温度(T > 70°C)时才明显催化分解。因此,在无水条件下形成的光解产物除了(4-HO–C 6 H 4)2 S以外,还基本上由离子的盐混合物组成:Ar 2(4-HO–C 6 H 4)S +,Ar(4-HO–C 6 H 4)2 S +和(4-HO–C 6 H 4)3 S +。除了这些产品,(卜吨OCO 2 -C 6 H ^ 4)2 S和当在水的存在
    DOI:
    10.1039/p29910001803
  • 作为产物:
    描述:
    4,4'-二羟基二苯硫醚 、 bis(4-hydroxyphenyl)iodonium 以52%的产率得到tris(4-hydroxyphenyl)sulphonium
    参考文献:
    名称:
    三(4-叔丁氧基羰基氧基苯基)sulph盐的光解。机械研究
    摘要:
    用紫外线在乙腈或二甲基亚砜溶液中辐照结构为Ar 3 S + X –(X –:CF 3 SO 3 –或AsF 6 –)的三(4-叔丁氧基羰基氧基苯基))盐。通过离子对色谱(IPC),1 H NMR测量和红外光谱进行的产物分析表明,同时形成了双(4-叔丁氧基羰基氧基苯基)硫化物,Ar 2 S和质子酸(CF 3 SO 3 H或HAsF 6)。 。后者催化了在室温下在无水的情况下碳酸叔丁酯基团。在水的存在下,酸解离,从而形成H 3 O +离子,仅在升高的温度(T > 70°C)时才明显催化分解。因此,在无水条件下形成的光解产物除了(4-HO–C 6 H 4)2 S以外,还基本上由离子的盐混合物组成:Ar 2(4-HO–C 6 H 4)S +,Ar(4-HO–C 6 H 4)2 S +和(4-HO–C 6 H 4)3 S +。除了这些产品,(卜吨OCO 2 -C 6 H ^ 4)2 S和当在水的存在
    DOI:
    10.1039/p29910001803
点击查看最新优质反应信息

文献信息

  • PROCESS FOR PRODUCING ALKOXYCARBONYLFLUOROALKANESULFONATES
    申请人:FUJIWARA Masaki
    公开号:US20080108846A1
    公开(公告)日:2008-05-08
    A process for producing an alkoxycarbonylfluoroalkanesulfonate represented by the formula [1] is provided. This process includes the steps of (a) reacting a halofluoroalkanoate represented by the formula [2], with a sulfinating agent, thereby obtaining an alkoxycarbonylfluoroalkanesulfinate represented by the formula [3]; and (b) reacting the alkoxycarbonylfluoroalkanesulfinate with an oxidizing agent, thereby obtaining the target alkoxycarbonylfluoroalkanesulfonate. Furthermore, it is possible to react the obtained alkoxycarbonylfluoroalkanesulfonate with a monovalent onium salt to conduct a salt exchange, thereby obtaining a alkoxycarbonylfluoroalkanesulfonic acid onium salt represented by the formula [4].
    提供了一种制备由公式[1]表示的烷氧羰基氟代烷磺酸盐的方法。这个过程包括以下步骤:(a)使由公式[2]表示的卤氟代烷酸盐与亚磺化剂反应,从而获得由公式[3]表示的烷氧羰基氟代烷亚磺酸盐;以及(b)使烷氧羰基氟代烷亚磺酸盐与氧化剂反应,从而获得目标烷氧羰基氟代烷磺酸盐。此外,可以将获得的烷氧羰基氟代烷磺酸盐与单价阳离子盐进行反应,进行盐交换,从而获得由公式[4]表示的烷氧羰基氟代烷磺酸阳离子盐。
  • Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    申请人:Ohsawa Youichi
    公开号:US20100119970A1
    公开(公告)日:2010-05-13
    There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
    揭示了一种抗性下层组合物,配置为在光刻中使用的多层抗性方法中使用,用于形成低于作为抗性上层膜的光刻胶层的一层,其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中,且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式(1)表示的酸的热酸发生剂。 可以提供一种抗性下层组合物,用于多层抗性方法(特别是双层抗性方法和三层抗性方法),该组合物用于形成低于作为抗性上层膜的光刻胶层的一层,该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中,并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
  • PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM
    申请人:SAGEHASHI Masayoshi
    公开号:US20130005997A1
    公开(公告)日:2013-01-03
    A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R 1 and R 2 are fluoroalkyl groups, R 3 and R 4 are hydrogen or monovalent hydrocarbon groups, X is chlorine, bromine or —OSO 2 R 5 group, and R 5 is alkyl or aryl.
    一种2,2-双(氟烷基)环氧烷(A)是通过将氟化醇(1)与氯化、溴化或磺化试剂在碱性条件下反应以形成环氧烷前体(2),然后将环氧烷前体在碱性条件下进行环闭合制备的。R1和R2是氟烷基,R3和R4是氢或一价碳氢基团,X是氯、溴或—OSO2R5基团,R5是烷基或芳基。
  • Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method
    申请人:Central Glass Company, Limited
    公开号:US20130130175A1
    公开(公告)日:2013-05-23
    A sulfonic acid onium salt represented by the following formula (1) useful as a superior radiosensitive acid generator for resist compositions. It is possible to form a good pattern by using a resist composition containing this sulfonic acid onium salt corresponding to the formula (1): in which R 1 represents a monovalent organic group, and Q + represents a sulfonium cation or iodonium cation.
    以下是用作优良的辐射敏感性酸发生剂的磺酸醋銨盐的化学式(1)。通过使用含有与化学式(1)对应的磺酸醋銨盐的抗蚀组合物,可以形成良好的图案: 其中R1代表一价有机基团,Q+代表磺銨阳离子或碘銨阳离子。
  • NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Ohsawa Youichi
    公开号:US20090246694A1
    公开(公告)日:2009-10-01
    Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
    光酸发生剂在高能辐射作用下生成式(1a)的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基,R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容,可以控制酸的扩散,因此适用于化学增感抗蚀组合物的使用。
查看更多