用紫外线在乙腈或二甲基亚砜溶液中辐照结构为Ar 3 S + X –(X –:CF 3 SO 3 –或AsF 6 –)的三(4-叔丁氧基羰基氧基苯基))盐。通过离子对色谱(IPC),1 H NMR测量和红外光谱进行的产物分析表明,同时形成了双(4-叔丁氧基羰基氧基苯基)硫化物,Ar 2 S和质子酸(CF 3 SO 3 H或HAsF 6)。 。后者催化了在室温下在无水的情况下碳酸叔丁酯基团。在水的存在下,酸解离,从而形成H 3 O +离子,仅在升高的温度(T > 70°C)时才明显催化分解。因此,在无水条件下形成的光解产物除了(4-HO–C 6 H 4)2 S以外,还基本上由离子的盐混合物组成:Ar 2(4-HO–C 6 H 4)S +,Ar(4-HO–C 6 H 4)2 S +和(4-HO–C 6 H 4)3 S +。除了这些产品,(卜吨OCO 2 -C 6 H ^ 4)2 S和当在水的存在
用紫外线在乙腈或二甲基亚砜溶液中辐照结构为Ar 3 S + X –(X –:CF 3 SO 3 –或AsF 6 –)的三(4-叔丁氧基羰基氧基苯基))盐。通过离子对色谱(IPC),1 H NMR测量和红外光谱进行的产物分析表明,同时形成了双(4-叔丁氧基羰基氧基苯基)硫化物,Ar 2 S和质子酸(CF 3 SO 3 H或HAsF 6)。 。后者催化了在室温下在无水的情况下碳酸叔丁酯基团。在水的存在下,酸解离,从而形成H 3 O +离子,仅在升高的温度(T > 70°C)时才明显催化分解。因此,在无水条件下形成的光解产物除了(4-HO–C 6 H 4)2 S以外,还基本上由离子的盐混合物组成:Ar 2(4-HO–C 6 H 4)S +,Ar(4-HO–C 6 H 4)2 S +和(4-HO–C 6 H 4)3 S +。除了这些产品,(卜吨OCO 2 -C 6 H ^ 4)2 S和当在水的存在
PROCESS FOR PRODUCING ALKOXYCARBONYLFLUOROALKANESULFONATES
申请人:FUJIWARA Masaki
公开号:US20080108846A1
公开(公告)日:2008-05-08
A process for producing an alkoxycarbonylfluoroalkanesulfonate represented by the formula [1] is provided. This process includes the steps of (a) reacting a halofluoroalkanoate represented by the formula [2], with a sulfinating agent, thereby obtaining an alkoxycarbonylfluoroalkanesulfinate represented by the formula [3]; and (b) reacting the alkoxycarbonylfluoroalkanesulfinate with an oxidizing agent, thereby obtaining the target alkoxycarbonylfluoroalkanesulfonate. Furthermore, it is possible to react the obtained alkoxycarbonylfluoroalkanesulfonate with a monovalent onium salt to conduct a salt exchange, thereby obtaining a alkoxycarbonylfluoroalkanesulfonic acid onium salt represented by the formula [4].
Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
申请人:Ohsawa Youichi
公开号:US20100119970A1
公开(公告)日:2010-05-13
There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and
wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher.
RCOO—CH
2
CF
2
SO
3
−
H
+
(1)
There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM
申请人:SAGEHASHI Masayoshi
公开号:US20130005997A1
公开(公告)日:2013-01-03
A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R
1
and R
2
are fluoroalkyl groups, R
3
and R
4
are hydrogen or monovalent hydrocarbon groups, X is chlorine, bromine or —OSO
2
R
5
group, and R
5
is alkyl or aryl.
Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method
申请人:Central Glass Company, Limited
公开号:US20130130175A1
公开(公告)日:2013-05-23
A sulfonic acid onium salt represented by the following formula (1) useful as a superior radiosensitive acid generator for resist compositions. It is possible to form a good pattern by using a resist composition containing this sulfonic acid onium salt corresponding to the formula (1):
in which R
1
represents a monovalent organic group, and Q
+
represents a sulfonium cation or iodonium cation.
NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Ohsawa Youichi
公开号:US20090246694A1
公开(公告)日:2009-10-01
Photoacid generators generate sulfonic acids of formula (
1
a) upon exposure to high-energy radiation.
ROC(═O)R
1
—COOCH
2
CF
2
SO
3
−
H
+
(1a)
RO is OH or C
1
-C
20
organoxy, R
1
is a divalent C
1
-C
20
aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.