4,4'-di(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone | 106301-90-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4,4'-di(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone
• 英文别名: 4,4'-Bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy)benzophenone；2-diazonio-5-[4-[4-(6-diazonio-5-oxidonaphthalen-1-yl)sulfonyloxybenzoyl]phenoxy]sulfonylnaphthalen-1-olate
• CAS: 106301-90-0
• 化学式: C₃₃H₁₈N₄O₉S₂
• 分子量: 678.659
• InChiKey: SHGYANPCACJSBK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  9.9
• 重原子数：
  48
• 可旋转键数：
  8
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  223
• 氢给体数：
  0
• 氢受体数：
  11

反应信息

• 作为反应物：
  描述：

  4,4'-di(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone 生成 4-{4-[4-(6-Diazo-5-oxo-5,6-dihydro-naphthalene-1-sulfonyloxy)-benzoyl]-phenoxy}-3H-indene-1-carboxylic acid
  参考文献：
  名称：

  Sauer, Erika; Bendig, Juergen; Zoladz, Simone, Molecular Crystals and Liquid Crystals Science and Technology, Section A: Molecular Crystals and Liquid Crystals, 1994, vol. 253, p. 151 - 160

  摘要：

  DOI：
• 作为产物：
  描述：

  4,4'-二羟基二苯甲酮 、 2-重氮-1-萘酚-5-磺酰氯 在 苄基三乙基氯化铵 、 sodium carbonate 作用下， 以 二氯甲烷 、 水 为溶剂， 生成 4,4'-di(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone
  参考文献：
  名称：

  Chromophore specific photoreactivity in 2,3,4-Tri(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone

  摘要：

  Different electronic structures for the three 1,2-naphthoquinone-2-diazide (NQD) chromophores in 2,3,4-tri (1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone were detected using H-1 NMR spectroscopy. The NQD substituent in the o-position of the benzophenone is influenced by intramolecular through space interactions with the benzophenone part of the molecule. The change in the electronic structure is the reason for the obtained different photoreactivity of the o-NQD chromophore compared with m-NQD and p-NQD. The relative quantum yields of photolysis are 0.3 (o-NQD) and 0.9/1.0 (m-NQD/p-NQD).

  DOI：

  10.1002/prac.19943360805

文献信息

• Low striation positive diazoketone resist composition with cyclic
  申请人：Allied Corporation

  公开号：US04526856A1

  公开（公告）日：1985-07-02

  A novel photoresist formulation is provided which provides low striations and excellent wetting properties. The photoresist composition may be applied by spin casting on various substrates used in integrated circuit manufacture. The essential component in this invention is the solvent composition which consists of cyclopentanone (or cyclopentanone-cyclohexanone blend) in combination with an aliphatic alcohol of 5-12 carbon atoms. These solvent components when used in certain specific ratios provide unexpectedly good wetting of various substrates and low striation films.

  提供了一种新型光刻胶配方，具有低条纹和优异的润湿性能。该光刻胶组合物可通过旋涂在集成电路制造中使用的各种基底上应用。该发明的基本组成部分是溶剂组合物，其中包括环戊酮（或环戊酮-环己酮混合物）和一个碳数为5-12的脂肪醇。当这些溶剂成分以某些特定比例使用时，可以意外地提供各种基底的良好润湿性和低条纹薄膜。
• Photochemical image process of positive photoresist element with
  申请人：Hoechst Celanese Corporation

  公开号：US05059513A1

  公开（公告）日：1991-10-22

  Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of CO--NH--CO groups, such as maleimide and especially maleimide--substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also comtemplates photosensitive elements and thermally stable phtochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photo-chemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

  本发明公开了一种敏感于Actinic（深紫外线、紫外线和可见光）光的正向光刻胶组合物，其包含一种能够在暴露于Actinic辐射下转化为碱溶性物种的碱不溶性光活性化合物的混合物，其量足以使混合物相对碱不溶性，并且包含一种聚合物，该聚合物包含足量的CO--NH--CO基团，例如马来酰亚胺和特别是马来酰亚胺取代的苯乙烯共聚物，其量足以使混合物在暴露于Actinic辐射下很容易溶于碱。首选的共聚物包括马来酰亚胺/苯乙烯或α-甲基苯乙烯在1:1的摩尔比。首选的甲基苯乙烯在1:1的摩尔比。适用于响应深紫外线Actinic辐射的正向光刻胶组合物的首选光活性化合物具有表I中的18-B式。本发明还包括基于Actinic光敏正向光刻胶组合物的光敏元件和热稳定的光化学成像系统。将正向光刻胶组合物涂覆在基底上以产生光敏元件，该元件在暴露于波长在约200-700nm的Actinic辐射的图案下产生可进行碱性显影的光化学成像系统，通过高度选择性地去除暴露区域来形成高度分辨率的图案。显影后，本发明的光化学成像系统的首选实施例在230°C的后烘烤下高分辨率特征（一微米）的图案图像变化微不足道，并且随后很容易去除。本发明的正向光刻胶组合物形成的光化学成像系统表现出的高热稳定性允许在像等离子体刻蚀机和离子注入机等设备上以更高的温度进行更快的处理；本发明的开发的光化学成像系统保持高分辨率，即保持锐利、陡峭的图案图像轮廓。
• Positive photoresist thermally stable compositions and elements having
  申请人：Hoechst Celanese Corporation

  公开号：US04857435A1

  公开（公告）日：1989-08-15

  Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of --CO--NH--CO-- groups, such as maleimide and especially maleimide-substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also contemplates photosensitive elements and thermally stable photochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photochemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

  本发明涉及一种深紫外线、紫外线和可见光敏感的阳性光刻胶组合物，其含有一种碱不溶性光活性化合物的混合物，该光活性化合物在暴露于光刻胶中的紫外线后能够转化为碱可溶性物质，其含量足以使混合物相对碱不溶性，并且包括一种聚合物，该聚合物包含足够量的--CO--NH--CO--基团，例如马来酰亚胺和尤其是马来酰亚胺取代的苯乙烯共聚物，使混合物在暴露于光刻胶中的紫外线后易于溶于碱性物质。优选的共聚物包括马来酰亚胺/苯乙烯或α-甲基苯乙烯的1:1摩尔比。适用于对深紫外线敏感的阳性光刻胶组合物的优选光活性化合物具有表I中的18-B式。本发明还涉及基于该光刻胶组合物的光敏元件和热稳定的光化学成像系统。将阳性光刻胶组合物涂覆在基板上，产生光敏元件，该元件在暴露于波长在约200-700 nm范围内的光刻胶图案后产生光化学成像系统，可以用碱性显影剂处理，通过高度选择性地去除暴露区域形成高度分辨率的图案。在显影后，本发明的光化学成像系统的优选实施例在230℃的后烘烤时高度分辨率特征（一微米）在图案图像中几乎不发生变化，之后容易剥离。由本发明的阳性光刻胶组合物形成的光化学成像系统表现出的高热稳定性允许在更高的温度下进行更快速的处理，例如在等离子体刻蚀机和离子注入器等设备上；本发明的开发光化学成像系统保持高分辨率，即保持尖锐、陡峭的图案图像轮廓。
• Reduction processes in the fast atom bombardment mass spectrometry of sulfonyl esters of diazonaphthalenones
  作者：James N. Kyranos、Bertrand M. Du Sorbier、John Wronka、Paul Vouros、Daniel P. Kirby

  DOI：10.1002/oms.1210230604

  日期：1988.6

  AbstractOrthoquinone diazides, which are widely used in microlithography, have attracted considerable attention, especially in terms of their application in the production of high‐contrast resists. Previous electron impact mass spectrometric results have confirmed that the primary fragmentation process of these compounds is the elimination of N2 to form an indenoketene ion. This is analogous to the photodecomposition pathway which makes them effective in the lithographic process. Those results also revealed the occurrence of an alternative process, which involves a two‐hydrogen reduction of the intermediate species formed prior to conversion to the ketene. The present study investigates the behaviour of the orthoquinone diazides when there is an abundance of protons available to form the reduction product. Several different types of diazonaphthalenone sulfonyl esters, ranging in complexity from the monosubstituted phenol esters to disubstituted dihydroxybenzophenones, were examined using fast atom bombardment mass spectrometry. Although reduction was the primary process in the hydrogen‐rich matrices, the extent of reduction was characteristic of the particular isomer as well as the matrix used.
• Low striation positive resist composition
  申请人：MicroSi, Inc. (a Delaware corporation)

  公开号：EP0126266B1

  公开（公告）日：1990-03-21