The present invention is directed to a mild, efficient, and general direct C(sp)-H bond silylation. Various embodiments includes methods, each method comprising or consisting essentially of contacting at least one organic substrate comprising a terminal alkynyl C—H bond, with a mixture of at least one organosilane and an alkali metal hydroxide, alkali metal alkoxide, or alkali metal hydride under conditions sufficient to form a silylated terminal alkynyl moiety. The methods are operable in the presence or substantially absence of transition-metal compounds. The systems associated with these methods are also disclosed.
本发明涉及一种温和、高效和通用的直接C(sp)-H键
硅烷化。各种实施方案包括各种方法,每种方法包括或基本上包括至少一种有机基质,该基质包含一个末端炔基 C-H 键,在足以形成
硅烷化末端炔基的条件下,与至少一种有机
硅烷和碱
金属氢氧化物、碱
金属烷氧化物或碱
金属
氢化物的混合物接触。这些方法可在过渡
金属化合物存在或基本不存在的情况下操作。与这些方法相关的系统也已公开。