申请人:Jung Cheol Won
公开号:US20070068450A1
公开(公告)日:2007-03-29
Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. The nitrogen semiconductor compound can be spin-coated at room temperature when applied to the fabrication of the device, and has superior electrical conductivity and photovoltaic properties.
本发明涉及一种新型氮半导体化合物,同时包括具有不同电学特性的基团,以及使用该氮半导体化合物作为有机半导体材料或空穴导体材料制造的器件。当应用于器件制造时,该氮半导体化合物可以在室温下进行旋涂,并具有优异的电导率和光伏特性。