Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
申请人:AIR PRODUCTS AND CHEMICALS, INC.
公开号:EP2574611A1
公开(公告)日:2013-04-03
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:
XmR1nHpSi(NR2R3)4-m-n-p I
wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1 - C10 alkyl, a C3- C12 alkenyl group, a C3-C12 alkynyl group, a C4- C10 cyclic alkyl group, and a C6- C10 aryl group; R3 is selected from a branched C3- C10 alkyl group, a C3-C12 alkenyl group, a C3- C12 alkynyl group, a C4- C10 cyclic alkyl group, and a C6- C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
本文描述的是前体和形成薄膜的方法。一方面,提供了具有式 I 的前体:
XmR1nHpSi(NR2R3)4-m-n-p I
其中 X 选自 Cl、Br、I;R1 选自直链或支链 C1-C10 烷基、C2-C12 烯基、C2-C12 炔基、C4-C10 环烷基和 C6-C10 芳基;R2 选自直链或支链 C1-C10 烷基、C3-C12 烯基、C3-C12 炔基、C4-C10 环烷基和 C6-C10 芳基;R3 选自支链 C3- C10 烷基、C3-C12 烯基、C3-C12 炔基、C4-C10 环烷基和 C6- C10 芳基;m 为 1 或 2;n 为 0、1 或 2;p 为 0、1 或 2;且 m+n+p 小于 4,其中 R2 和 R3 连接或不连接以形成环。