2,3,5,6-四甲基苯-1,4-二磺酸 | 81212-00-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 2,3,5,6-四甲基苯-1,4-二磺酸
• 英文名称: 2,3,5,6-tetramethylbenzene-1,4-disulfonic acid
• 英文别名: tetramethyl-benzene-1,4-disulfonic acid；Tetramethyl-benzol-1,4-disulfonsaeure
• CAS: 81212-00-2
• 化学式: C₁₀H₁₄O₆S₂
• 分子量: 294.35
• InChiKey: GMAVOKCCIVJURU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  18
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  126
• 氢给体数：
  2
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  2,3,5,6-四甲基苯-1,4-二磺酸 生成 1,2,4,5-四甲苯
  参考文献：
  名称：

  Study of the tensile fracture of plates with a rigid linear inclusion

  摘要：

  The limit equilibrium of elastoplastic body is studied under the conditions of a plane problem. The body contains a linear inclusion, which is rigid but of finite rupture strength. The plastic or prefracture zones develop near the ends of the inclusion and are modeled by slip cracks along the matrix-inclusion interface. A new interpretation of the boundary conditions is proposed to solve a model problem for such a composition, and its analytical solution is derived. Two possible mechanisms of local fracture are considered: (a) fracture of the inclusion and (b) separation of the inclusion. The critical length of the inclusion is determined. This length together with the elastic and strength parameters of the composition determines the mechanism of local fracture. The limit loads are found for each mechanism of fracture.

  DOI：

  10.1007/bf02682305
• 作为产物：
  描述：

  1,2,4,5-四甲苯 在 硫酸 、 三氧化硫 作用下， 生成 2,3,5,6-四甲基苯-1,4-二磺酸
  参考文献：
  名称：

  Study of the tensile fracture of plates with a rigid linear inclusion

  摘要：

  The limit equilibrium of elastoplastic body is studied under the conditions of a plane problem. The body contains a linear inclusion, which is rigid but of finite rupture strength. The plastic or prefracture zones develop near the ends of the inclusion and are modeled by slip cracks along the matrix-inclusion interface. A new interpretation of the boundary conditions is proposed to solve a model problem for such a composition, and its analytical solution is derived. Two possible mechanisms of local fracture are considered: (a) fracture of the inclusion and (b) separation of the inclusion. The critical length of the inclusion is determined. This length together with the elastic and strength parameters of the composition determines the mechanism of local fracture. The limit loads are found for each mechanism of fracture.

  DOI：

  10.1007/bf02682305

文献信息

• SULFONATING AGENT AND PROCESS
  申请人：KONISHI CHEMICAL IND. CO., LTD.

  公开号：EP0505582A1

  公开（公告）日：1992-09-30

  A sulfonating agent represented by general formula (I) and a process for sulfonating an aromatic compound therewith, wherein R¹ groups may be the same or different from each other and each represents C₁ to C₃ lower alkyl, n represents an integer of 3 to 5, and m represents an integer of 1 or 2, provided that n + m ≦ 6.

  由通式(I)代表的磺化剂以及用其磺化芳香族化合物的工艺，其中 R¹ 基团可以彼此相同或不同，且各自代表 C₁ 至 C₃ 低级烷基，n 代表 3 至 5 的整数，m 代表 1 或 2 的整数，条件是 n + m ≦ 6。
• Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those
  申请人：Sakaguchi Yoshimitsu

  公开号：US20060166048A1

  公开（公告）日：2006-07-27

  A polyarylene ether-based compound according to the present invention includes polymer components represented in general formula (1) and general formula (2): wherein Ar indicates a divalent aromatic group, Y indicates a sulfone group or a ketone group, X indicates H or a monovalent cation species, and Ar′ indicates a divalent aromatic group.

  根据本发明的聚芳醚基化合物包括通式(1)和通式(2)表示的聚合物组分： 其中 Ar 表示二价芳基，Y 表示砜基或酮基，X 表示 H 或一价阳离子，Ar′ 表示二价芳基。
• Koeberg-Telder, Ankie; Cerfontain, Hans, Recueil des Travaux Chimiques des Pays-Bas, 1982, vol. 101, # 1, p. 41 - 47
  作者：Koeberg-Telder, Ankie、Cerfontain, Hans

  DOI：——

  日期：——
• POLYARYLENE ETHER COMPOUND CONTAINING SULFONIC ACID GROUP, COMPOSITION CONTAINING SAME, AND METHOD FOR MANUFACTURING THOSE
  申请人：Toyo Boseki Kabushiki Kaisha

  公开号：EP1561768B1

  公开（公告）日：2009-09-30
• MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME
  申请人：Orita Akihiro

  公开号：US20120313199A1

  公开（公告）日：2012-12-13

  The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.