申请人:Ito Azumi
公开号:US20140306146A1
公开(公告)日:2014-10-16
The present invention is an etching gas comprising an unsaturated fluorohydrocarbon represented by C
x
H
y
F
z
(wherein x=3, 4, or 5, y+z≦2x, and y>z) and a method comprising selectively etching a silicon nitride film relative to a silicon oxide film or a silicon film using the etching gas. According to the present invention, a silicon nitride film stacked on a silicon oxide film or a silicon film can be highly selectively etched.
本发明是一种包括由CxHyFz(其中x=3、4或5,y+z≦2x,且y>z)表示的不饱和氟碳氢化物的蚀刻气体,以及一种使用该蚀刻气体相对于硅氧化物膜或硅膜选择性蚀刻硅氮化物膜的方法。根据本发明,可以高度选择性地蚀刻堆叠在硅氧化物膜或硅膜上的硅氮化物膜。