ETCHANT COMPOSITION, METHOD OF ETCHING INSULATING FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SILANE COMPOUND
申请人:SK Innovation Co., Ltd.
公开号:US20190359887A1
公开(公告)日:2019-11-28
An etchant composition includes a silane compound represented by the following Chemical Formula 1:
wherein R
1
to R
6
are independently hydrogen, halogen, a substituted or unsubstituted C
1
-C
20
hydrocarbyl group, a phenyl group, a C
1
-C
20
alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C
1
-C
20
) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C
1
-C
3
hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.
一种蚀刻组合物包括以下化学式1所代表的硅烷化合物:其中R1至R6独立地表示氢、卤素、取代或未取代的C1-C20烃基、苯基、C1-C20烷氧基、羧基、羰基、硝基、三(C1-C20)烷基硅基、磷酰基或氰基,L是直接键或C1-C3烃基亚基,A是n价基团,n为1至4的整数。