3,3',5,5'-Tetrabromo-1,1'-biadamantane | 150785-12-9

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 有机溴化物
• 英文名称: 3,3',5,5'-Tetrabromo-1,1'-biadamantane
• 英文别名: 1,3-Dibromo-5-(3,5-dibromo-1-adamantyl)adamantane
• CAS: 150785-12-9
• 化学式: C₂₀H₂₆Br₄
• 分子量: 586.042
• InChiKey: GEINHROHAQATKC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.8
• 重原子数：
  24
• 可旋转键数：
  1
• 环数：
  8.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  3,3',5,5'-Tetrabromo-1,1'-biadamantane 在 sodium hydroxide 、 sodium tetrahydroborate 、 五氯化磷 、 臭氧 作用下， 以 1,4-二氧六环 、 氯仿 为溶剂， 反应 24.7h， 生成 5,5'-Bi(1-chloro-2-oxaadamantane)
  参考文献：
  名称：

  Synthesis of 5,5'-bi-2-oxaadamantane

  摘要：

  DOI：

  10.1021/jo00072a053
• 作为产物：
  描述：

  1-溴金刚烷 在 aluminum (III) chloride 、 溴 、 sodium 作用下， 以 正辛烷 为溶剂， 反应 8.0h， 生成 3,3',5,5'-Tetrabromo-1,1'-biadamantane
  参考文献：
  名称：

  基于1,1'-双金刚烷†的刚性核的合成

  摘要：

  已经开发了一种有效的策略来制备一系列基于1,1'-双金刚烷的刚性核。通过AlCl 3或AlBr 3的作用观察到溴苯在烷基化中的歧化。根据获得的结果，还概述了这些反应的拟议机制。

  DOI：

  10.1039/c5ra27528h

文献信息

• Ethynylphenylbiadamantane derivatives
  申请人：Daicel Chemical Industries, Ltd.

  公开号：EP2014636A1

  公开（公告）日：2009-01-14

  Disclosed is a halophenylbiadamantane derivative of following Formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent, for example, a hydrogen atom or a halo-substituted or unsubstituted alkyl or cycloalkyl group having about six or less carbon atom(s), provided that at least one of R1 to R6 represents a substituent represented by following Formula (2): wherein X represents a halogen atom; and "n" denotes a natural number of 1 to 5, wherein when only one of R1 to R6 is a substituent of Formula (2), then at least one of R1 to R6 is a halo-substituted or unsubstituted alkyl or cycloalkyl group having about six or less carbon atom(s) or "n" is a natural number of 2 or more. The halophenylbiadamantane derivative is usable as an intermediate material for a wide variety of biadamantane derivatives.

  本发明揭示了以下式（1）的卤苯基双螺烷衍生物：其中R1、R2、R3、R4、R5和R6各自独立地代表例如氢原子或具有大约六个或更少碳原子的卤代或未卤代的烷基或环烷基基团，前提是R1到R6中至少有一个代表以下式（2）所表示的取代基：其中X代表卤素原子；“n”表示1到5的自然数，当R1到R6中仅有一个是式（2）的取代基时，那么R1到R6中至少有一个是具有大约六个或更少碳原子的卤代或未卤代的烷基或环烷基基团，或者“n”是2或更多的自然数。该卤苯基双螺烷衍生物可用作各种双螺烷衍生物的中间体材料。
• RESIN COMPOSITION, VARNISH, RESIN FILM AND SEMICONDUCTOR DEVICE USING THE SAME
  申请人：Fujita Kazuyoshi

  公开号：US20090118431A1

  公开（公告）日：2009-05-07

  A main object of the present invention is to provide a resin composition having high heat resistance and a low dielectric constant, a varnish thereof, a resin film thereof and a semiconductor device using the same. In the present invention, the object is achieved by a resin composition comprising a compound having a structure represented by formula (1) and a crosslinking agent: wherein in formula (1), R 0 is a single bond or has a structure represented by formula (2); R 1 to R 8 are respectively any of hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms other than the group having an alicyclic structure, a hydroxyl group and a carboxyl group; and “X” is any of —O—, —NHCO—, —CONH—, —COO— and —OCO—; further, wherein in formula (2), “Ar” is an aromatic group; “Y” is any of a single bond —O—, —S—, —OCO— and —COO—; “q” is an integer of 1 or more; R 9 is hydrogen or an organic group having 1 or more carbon atoms and may be identical with or different from each other when “q” is an integer of 2 or more; at least one of R 1 to R 8 is the group having an alicyclic structure when R 0 is a single bond; at least one of R 1 to R 9 is the group having an alicyclic structure when R 0 has the structure represented by formula (2); and “*” and “**” represent a position to be bonded to a different chemical structure.

  本发明的主要目的是提供一种具有高耐热性和低介电常数的树脂组合物，其清漆，树脂膜以及使用该组合物的半导体器件。在本发明中，通过包括具有以下结构的化合物和交联剂的树脂组合物来实现该目标：其中在公式（1）中，R0是单键或具有以下结构的化合物（2）；R1到R8分别为氢、具有脂环结构的基团、具有1到10个碳原子的有机基团（不包括具有脂环结构的基团）、羟基和羧基中的任意一种；“X”是以下任意一种：—O—、—NHCO—、—CONH—、—COO—和—OCO—；此外，在公式（2）中，“Ar”是芳香族基团；“Y”是以下任意一种：单键—O—、—S—、—OCO—和—COO—；“q”是1或更多的整数；当“q”是2或更多的整数时，R9是氢或具有1个或更多碳原子的有机基团，并且可以相同或不同；当R0是单键时，R1到R8中至少有一个是具有脂环结构的基团；当R0具有以下结构的化合物（2）时，R1到R9中至少有一个是具有脂环结构的基团；“*”和“**”表示要与不同化学结构结合的位置。
• ORGANIC INSULATING MATERIALS, VARNISHES FOR ORGANIC INSULATING FILM EMPLOYING THEM, ORGANIC INSULATING FILMS AND SEMICONDUCTOR DEVICES
  申请人：MATSUTANI Mihoko

  公开号：US20090318610A1

  公开（公告）日：2009-12-24

  There are provided organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as organic insulating films with low permittivity, high heat resistance and high mechanical strength that employ the same, and semiconductor devices comprising the foregoing. An organic insulating material comprising a compound represented by general formula (1), or a polymer obtained by polymerizing a compound represented by general formula (1), or a mixture of a compound represented by general formula (1) and the polymer. X-VW n Y  (1) (In formula (1), X and Y each independently represent one or more groups with polymerizable functional groups. V and W each represent a group having an adamantane or polyamantane structure, and they may be the same or different. The letter n represents an integer of 0 or greater).

  提供了有机绝缘材料，具有低介电常数、高耐热性和高机械强度，以及采用相同材料的低介电常数、高耐热性和高机械强度的有机绝缘膜，以及包括上述材料的半导体器件。有机绝缘材料包括由通式（1）表示的化合物、由通式（1）表示的化合物聚合得到的聚合物，或通式（1）表示的化合物和聚合物的混合物。X和Y各自独立表示具有可聚合功能基团的一个或多个基团。V和W分别表示具有金刚烷或聚金刚烷结构的基团，它们可以相同也可以不同。字母n表示大于等于0的整数。
• ORGANIC INSULATING MATERIAL, VARNISH FOR RESIN FILM USING THE SAME, RESIN FILM AND SEMICONDUCTOR DEVICE
  申请人：Sano Yohko

  公开号：US20100004379A1

  公开（公告）日：2010-01-07

  The invention provides useful organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as resin films and semiconductor devices employing them. The organic insulating materials of the invention comprise prepolymers of adamantane structure compounds having polymerizable unsaturated bond-containing groups. The prepolymers have number-average molecular weights of between 2,000 and 500,000 based on polystyrene, as measured by gel permeation chromatography. The polymerizable unsaturated bond-containing groups are preferably groups that contain carbon-carbon triple bonds. The resin films of the invention are obtained by crosslinking reaction of the organic insulating materials or varnishes for resin film containing them, by heating and/or active irradiation, and condensation reaction.

  本发明提供了有用的有机绝缘材料，具有低介电常数、高耐热性和高机械强度，以及采用它们的树脂薄膜和半导体器件。本发明的有机绝缘材料包括具有可聚合不饱和键含基团的金刚烷结构化合物的预聚物。根据凝胶渗透色谱法，预聚物的数均分子量在聚苯乙烯基础上为2,000至500,000之间。可聚合不饱和键含基团最好是含有碳-碳三键的基团。本发明的树脂薄膜是通过加热和/或活性辐射以及缩合反应交联反应有机绝缘材料或含有它们的树脂薄膜漆制得的。
• ORGANIC INSULATING MATERIAL, VARNISH FOR ORGANIC INSULATING FILM USING THE SAME, ORGANIC INSULATING FILM AND SEMICONDUCTOR DEVICE
  申请人：Sumitomo Bakelite Co., Ltd.

  公开号：EP2117009A1

  公开（公告）日：2009-11-11

  There are provided organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as organic insulating films with low permittivity, high heat resistance and high mechanical strength that employ the same, and semiconductor devices comprising the foregoing. An organic insulating material comprising a compound represented by general formula (1), or a polymer obtained by polymerizing a compound represented by general formula (1), or a mixture of a compound represented by general formula (1) and the polymer. (In formula (1), X and Y each independently represent one or more groups with polymerizable functional groups. V and W each represent a group having an adamantane or polyamantane structure, and they may be the same or different. The letter n represents an integer of 0 or greater.)

  本发明提供了具有低介电常数、高耐热性和高机械强度的有机绝缘材料，以及具有低介电常数、高耐热性和高机械强度的有机绝缘薄膜，以及包含上述材料的半导体器件。一种有机绝缘材料，包括通式（1）所代表的化合物，或通过聚合通式（1）所代表的化合物而得到的聚合物，或通式（1）所代表的化合物与聚合物的混合物。 式（1）中，X 和 Y 各自独立地代表一个或多个具有可聚合官能团的基团。V 和 W 各自代表具有金刚烷或聚金刚烷结构的基团，它们可以相同或不同。字母 n 代表 0 或更大的整数）。