Photosensitive compound, photosensitive composition, method for resist pattern formation, and process for device prodution
申请人:CANON KABUSHIKI KAISHA
公开号:EP1865379A1
公开(公告)日:2007-12-12
A process for forming a resist pattern comprises the steps of applying on a substrate to form a photosensitive resist layer a photosensitive composition comprising at least one photosensitive compound having, in the molecule, two or more structural units represented by C6R2-6-CHR1-OR7 or C6R2-6-CHR1-COOR7 where R1 is a hydrogen atom or an alkyl group, at least one of R2, R3, R4, R5, and R6 is a nitro group, and others are selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl, an alkoxy, a phenyl, a naphthyl, and an alkyl in which a part or the entire of hydrogen atoms are substituted by a fluorine atom, and R7 is a substituted or unsubstituted phenylene or naphthylene group dissolved in an organic solvent, irradiating the resist layer selectively with a radiation ray, and developing a portion irradiated by the ray to form a pattern of the resist layer.
一种形成抗蚀剂图案的工艺包括以下步骤 在基底上涂敷感光组合物以形成感光抗蚀剂层,该感光组合物包括至少一种感光化合物,其分子中具有两个或两个以上由C6R2-6-CHR1-OR7或C6R2-6-CHR1-COOR7代表的结构单元,其中R1是氢原子或烷基,R2、R3、R4、R5和R6中至少有一个是硝基、其他选自氢原子、卤素原子、烷基、烷氧基、苯基、萘基和其中部分或全部氢原子被氟原子取代的烷基组成的组,R7 是溶于有机溶剂中的取代或未取代的亚苯基或萘基,用射线选择性地照射抗蚀层,并显影被射线照射的部分以形成抗蚀层的图案。