Interfacial response of a novel gemini metallo-surfactant to ionic guest species
摘要:
The surface properties of a novel metallosurfactant with twin dodecyl aza-crown aliphatic tails (13) were studied by surface pressure isotherms on aqueous subphases of selected Group I and Group II metals. Mean molecular areas of the headgroup at the monolayer interface (gas phase) are observed to decrease in response to aqueous phase complexation of 13 by metal ions in the order Ca2+, Li+, Mg2+, Na+, Ba2+ and K+. The surface-tension derived critical micelle concentration of 13 at 25 C was 0.072 mM, while atomic force microscopy of aggregates observed after preparing Langmuir Blodgett multilayers on mica confirmed the formation of vesicles of up to 100 nm diameter, as opposed to wormlike micelles formed by the monomeric analogs. (C) Elsevier B.V. All Rights Reserved
PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE
申请人:FUJIFILM CORPORATION
公开号:US20160018734A1
公开(公告)日:2016-01-21
There is provided a pattern forming method comprising (a) a step of forming a film on a substrate using an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, (b) a step of forming a top coat layer on the film using a top coat composition containing a resin (T) containing at least any one of repeating units represented by formulae (I-1) to (I-5) shown below, (c) a step of exposing the film having the top coat layer using an electron beam or an extreme ultraviolet radiation, and (d) a step of developing the film having the top coat layer after the exposure to form a pattern.
Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device
申请人:FUJIFILM Corporation
公开号:US10175578B2
公开(公告)日:2019-01-08
A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).
Pattern forming method, resist pattern, and process for producing electronic device
申请人:FUJIFILM Corporation
公开号:US10578968B2
公开(公告)日:2020-03-03
The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.
Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing
申请人:FUJIFILM Corporation
公开号:US10928727B2
公开(公告)日:2021-02-23
According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a hydrophobic resin (B), and a resin (C) having an aromatic ring, as well as a film, a mask blank, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided.
Synthesis and characterization of an amphiphilic cobalt cage complex with aza-crown spacer
作者:Gina E. Jaggernauth、Richard A. Fairman
DOI:10.1016/j.inoche.2010.09.036
日期:2011.1
The synthesis, spectrophotometric and surfactant properties of a novel amphiphilic cobalt cage metallosurfactant with an aza-oxa crown ether spacer and dodecyl hydrocarbon tail are reported. Surface pressure isotherms with Group I and Group II metal solution subphases indicate increasing interaction of the crown moiety with Ca2+, Na+, K+, Li+/Ba2+ and Mg2+ ions in that order, with mean molecular areas of the effective head group at the surface ranging from 141 angstrom(2) to 219 angstrom(2). The critical micelle concentrations determined by surface tension measurements of the unmetallated ligand and the metallosurfactant are 1.98 mM and 0.66 mM respectively. Wormlike micelles and vesicles are observed with atomic force microscopy after multilayer Langmuir Blodgett film deposition on a glass substrate. (C) 2010 Elsevier B.V. All rights reserved.