(2-Oxo-1,3-dioxan-5-yl) 2,2-dimethylbutanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: (2-Oxo-1,3-dioxan-5-yl) 2,2-dimethylbutanoate
• 英文别名: (2-oxo-1,3-dioxan-5-yl) 2,2-dimethylbutanoate
• 化学式: C₁₀H₁₆O₅
• 分子量: 216.23
• InChiKey: HZMOBYBYIQOWFD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  15
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  61.8
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170131635A1

  公开（公告）日：2017-05-11

  A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R 1 -R 6 are monovalent hydrocarbon groups, X 1 is a divalent hydrocarbon group, Z 1 is an aliphatic group, Z 2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

  提供了一个化学式为（1a）或（1b）的单体，其中A是一个可聚合的基团，R1-R6是一价碳氢基团，X1是一个二价碳氢基团，Z1是一个脂肪基团，Z2形成一个脂环基团，k=0或1，m=1或2，n=1到4。通过聚合单体得到了一种有用的聚合物。包含该聚合物的抗蚀组合物具有改善的显影性能，并且经过处理形成具有高对比度、高分辨率和耐蚀性的负图案，该负图案在碱性显影剂中不溶。
• HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160238930A1

  公开（公告）日：2016-08-18

  A polymer for resist use is obtainable from a hemiacetal compound having formula (1 a ) wherein R 1 is H, CH 3 or CF 3 , R 2 to R 4 each are H or a monovalent hydrocarbon group, X 1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k 1 =0 or 1, and k 2 =0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

  从具有以下式（1a）的半缩醛化合物获得用于抗蚀的聚合物，其中R1为H、CH3或CF3，R2至R4分别为H或单价碳氢基团，X1为二价碳氢基团，ZZ表示具有半缩醛结构的非芳香性4至20个碳原子的单环或多环环，k1=0或1，k2=0至3。包含该聚合物的抗蚀组合物显示出在正片和负片显影过程中控制酸扩散和低粗糙度。
• POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160342086A1

  公开（公告）日：2016-11-24

  A pattern forming process is provided comprising the steps of applying a resist composition comprising a polymer comprising recurring units having formula (1a) and/or (1b), an acid generator and a solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing in an alkaline developer to form a negative tone pattern.
• US9046772B2
  申请人：——

  公开号：US9046772B2

  公开（公告）日：2015-06-02
• US9235122B2
  申请人：——

  公开号：US9235122B2

  公开（公告）日：2016-01-12