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bis(heptafluoropropanesulfonyl)imide acid | 152894-12-7

中文名称
——
中文别名
——
英文名称
bis(heptafluoropropanesulfonyl)imide acid
英文别名
Bis(1,1,2,2,3,3,3-heptafluoro-1-propanesulfonyl)imide;1,1,2,2,3,3,3-heptafluoro-N-(1,1,2,2,3,3,3-heptafluoropropylsulfonyl)propane-1-sulfonamide
bis(heptafluoropropanesulfonyl)imide acid化学式
CAS
152894-12-7
化学式
C6HF14NO4S2
mdl
——
分子量
481.188
InChiKey
LMASMPWURZYBEE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    244.1±50.0 °C(Predicted)
  • 密度:
    1.886±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    4
  • 重原子数:
    27
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    97.1
  • 氢给体数:
    1
  • 氢受体数:
    19

上下游信息

  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    bis(heptafluoropropanesulfonyl)imide acid硫酸二甲酯 反应 21.0h, 以92%的产率得到N-methyl bis(heptafluoropropanesulfonyl)imide
    参考文献:
    名称:
    FLUORINE-CONTAINING N-ALKYLSULFONYLIMIDE COMPOUND, MANUFACTURING METHOD THEREFOR, AND METHOD OF MANUFACTURING AN IONIC COMPOUND
    摘要:
    根据制备含氟N-烷基磺酰亚胺化合物的方法,可以通过用二烷基硫酸或二烷基碳酸烷基化含氟磺酰亚胺酸或含氟磺酰亚胺酸盐来安全地高回收率地生产含氟N-烷基磺酰亚胺化合物。
    公开号:
    US20120022269A1
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文献信息

  • IONIC COMPOUNDS HAVING A SILYLOXY GROUP
    申请人:HYDRO-QUÉBEC
    公开号:US20150093655A1
    公开(公告)日:2015-04-02
    There is provided an ionic compound having attached thereto a silyloxy group. There is also provided methods of making this ionic compound as well as electrolytes, electrochemical cells and capacitors comprising this ionic compound.
    提供了一种具有硅氧基团的离子化合物。还提供了制备该离子化合物的方法,以及包含该离子化合物的电解质、电化学电池和电容器。
  • Resist composition and patterning process
    申请人:Watanabe Satoshi
    公开号:US20100009299A1
    公开(公告)日:2010-01-14
    The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    本发明涉及一种抗蚀组合物,例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物,除了在微细加工的光刻工艺中具有更高的分辨率外,特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中;以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物,其包括一种或多种胺化合物或胺氧化合物(除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物),至少具有一个羧基,并且没有氢原子共价键结合到氮原子作为碱性中心。
  • POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:NISHI Tsunehiro
    公开号:US20100062374A1
    公开(公告)日:2010-03-11
    A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
    一种正性光刻胶组合物包括(A)在酸的作用下在碱性显影剂中变得可溶的树脂组分和(B)酸发生剂。树脂(A)是一种聚合物,包含由式(1)表示的非离去羟基的重复单元,其中R1为H、甲基或三氟甲基,X为单键或亚甲基,m为1或2,并且羟基连接到次级碳原子。当通过光刻工艺处理时,该组合物在分辨率方面得到改善。
  • NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Ohsawa Youichi
    公开号:US20090246694A1
    公开(公告)日:2009-10-01
    Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
    光酸发生剂在高能辐射作用下生成式(1a)的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基,R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容,可以控制酸的扩散,因此适用于化学增感抗蚀组合物的使用。
  • RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER
    申请人:ASANO Yuusuke
    公开号:US20120156612A1
    公开(公告)日:2012-06-21
    A radiation-sensitive resin composition includes a first polymer that includes a repeating unit having an acid-labile group and becomes alkali-soluble upon dissociation of the acid-labile group, and a radiation-sensitive acid-generating agent. The acid-labile group has a structure shown by a general formula (1). R 1 represents a methyl group or the like, R 2 represents a hydrocarbon group that forms a cyclic structure, R 3 represents a fluorine atom or the like, R 4 represents a carbon atom, and n 1 is an integer from 1 to 7.
    一种辐射敏感树脂组合物包括第一聚合物,其中包括具有酸敏感基团的重复单元,在酸敏感基团解离后变为碱溶解性,并且包括辐射敏感酸发生剂。酸敏感基团具有通式(1)所示的结构。R1代表甲基基团或类似物,R2代表形成环状结构的碳氢基团,R3代表氟原子或类似物,R4代表碳原子,n1为1至7之间的整数。
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