[2-Oxo-2-(2-oxooxolan-3-yl)oxyethyl] 2-tert-butyl-2,4,4-trimethylpentanoate

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: [2-Oxo-2-(2-oxooxolan-3-yl)oxyethyl] 2-tert-butyl-2,4,4-trimethylpentanoate
• 英文别名: [2-oxo-2-(2-oxooxolan-3-yl)oxyethyl] 2-tert-butyl-2,4,4-trimethylpentanoate
• 化学式: C₁₈H₃₀O₆
• 分子量: 342.4
• InChiKey: QYLBMAMUQZNSGO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.3
• 重原子数：
  24
• 可旋转键数：
  9
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  78.9
• 氢给体数：
  0
• 氢受体数：
  6

文献信息

• SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20170247323A1

  公开（公告）日：2017-08-31

  A salt having a group represented by the formula (aa): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocycilic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, and * represents a binding position.

  一种盐，其具有由公式（aa）表示的基团：其中Xa和Xb独立地代表一个氧原子或一个硫原子，环W代表一个具有酯键或硫酯键的C3-C36杂环环，该杂环环还可以进一步具有一个氧原子、一个硫原子、一个羰基或一个磺酰基，其中每个都已被一个亚甲基取代，该杂环环还可以具有一个羟基、一个氰基、一个羧基、一个C1-C12烷基、一个C1-C12烷氧基、一个C2-C13烷氧羰基、一个C2-C13酰基、一个C2-C13酰氧基、一个C3-C12脂环烃基、一个C6-C10芳香烃基或任何组合，其中每个都已被氢原子取代，*表示一个结合位置。
• SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20200387069A1

  公开（公告）日：2020-12-10

  Disclosed are a salt represented by formula (1), and a quencher and a resist composition comprising the same: wherein R 1 , R 2 and R 3 each independently represent a halogen atom, an alkyl fluoride group having 1 to 6 carbon atoms or a hydrocarbon group having 1 to 18 carbon atoms, and —CH 2 — included in the hydrocarbon group may be replaced by —O— or —CO—, m1, m2 and m3 represent an integer of 0 to 4, and when m1, m2 and/or m3 are 2 or more, a plurality of R 1 , a plurality of R 2 and/or a plurality of R 3 may be the same or different from each other, and X 1 represents —CO—, —SO— or —SO 2 —.

  公开了一种由式（1）表示的盐，以及包括该盐的淬灭剂和抗蚀组合物：其中R1、R2和R3分别独立表示卤素原子、具有1至6个碳原子的烷基氟基或具有1至18个碳原子的碳氢基，而包含在碳氢基中的—CH2—可被—O—或—CO—替代，m1、m2和m3代表0至4的整数，当m1、m2和/或m3为2或更多时，多个R1、多个R2和/或多个R3可能相同或不同，X1表示—CO—、—SO—或—SO2—。
• Resist composition
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US10795258B2

  公开（公告）日：2020-10-06

  A resist composition which contains a resin (A1) which has a structural unit having a sulfonyl group, a structural unit represented by formula (II) and a structural unit having an acid-labile group, and an acid generator: wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom, L1 represents a single bond or *-L2-CO—O-(L3-CO—O)g— where * represents a binding position to an oxygen atom, L2 and L3 independently represent a C1 to C12 divalent hydrocarbon group, “g” represents 0 or 1, and R3 represents a C1 to C12 liner or branched alkyl group except for a tertiary alkyl group.

  一种抗蚀剂组合物，其中包含一种树脂 (A1)，该树脂具有具有磺酰基的结构单元、由式 (II) 表示的结构单元和具有耐酸基的结构单元，以及一种酸发生器： 其中 R1 代表氢原子、卤素原子或可能具有卤素原子的 C1 至 C6 烷基，L1 代表单键或 *-L2-CO-O-(L3-CO-O)g-，其中 * 代表与氧原子的结合位置，L2 和 L3 独立地代表 C1 至 C12 二价烃基，"g "代表 0 或 1，R3 代表 C1 至 C12 直链或支链烷基（叔烷基除外）。
• PROCESS FOR PRODUCING PHOTORESIST PATTERN AND PHOTORESIST COMPOSITION
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20170329224A1

  公开（公告）日：2017-11-16

  A process for producing a photoresist pattern comprising steps (1) to (5); (1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a developer which comprises butyl acetate, wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3, the distance is calculated from formula (1): R =(4×(δ d R −15.8) 2 +(δ p R −3.7) 2 +(δ h R −6.3) 2 ) 1/2 (1) in which δd R represents a dispersion parameter of the resin, δp R represents a polarity parameter of the resin, δh R represents a hydrogen bonding parameter of the resin, and R represents the distance, and a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.
• RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20210311392A1

  公开（公告）日：2021-10-07

  Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):