1-(1-Methoxypropan-2-yloxy)propan-2-yl 2-methylbutanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 1-(1-Methoxypropan-2-yloxy)propan-2-yl 2-methylbutanoate
• 英文别名: 1-(1-methoxypropan-2-yloxy)propan-2-yl 2-methylbutanoate
• 化学式: C₁₂H₂₄O₄
• 分子量: 232.32
• InChiKey: XINQQNKNHRDSPA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  16
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  44.8
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD
  申请人：FUJIFILM Corporation

  公开号：US20160291461A1

  公开（公告）日：2016-10-06

  There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.
• ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM
  申请人：FUJIFILM Corporation

  公开号：US20180175300A1

  公开（公告）日：2018-06-21

  An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).