Acetic acid, nitrilotri-, monoammonium salt | 15934-02-8

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Acetic acid, nitrilotri-, monoammonium salt
• 英文别名: azane;2-[bis(carboxymethyl)amino]acetic acid
• CAS: 15934-02-8
• 化学式: C6H12N2O6
• 分子量: 208.17
• InChiKey: QRTCASNUSVDIEL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.3
• 重原子数：
  14
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  116
• 氢给体数：
  4
• 氢受体数：
  8

文献信息

• COMPOSITION FOR SILICON WAFER POLISHING LIQUID
  申请人：Kao Corporation

  公开号：US20150111383A1

  公开（公告）日：2015-04-23

  A polishing liquid composition for a silicon wafer, wherein the composition comprises silica particles (component A), at least one kind of nitrogen-containing basic compound (component B) selected from an amine compound and an ammonium compound, and a water-soluble macromolecular compound (component C) that contains 10 wt % or more of a constitutional unit I represented by a general formula (1) below and has a weight average molecular weight of 50,000 or more and 1,500,000 or less; and the pH at 25° C. is 8.0 to 12.0. In the general formula (1), R 1 and R 2 each independently represents a hydrogen, a C1 to C8 alkyl group, or a C1 to C2 hydroxyalkyl group, and R 1 and R 2 are never both hydrogens.

  一种用于硅晶片的抛光液组合物，其中该组合物包括二氧化硅颗粒（组分A），至少一种含氮碱性化合物（组分B）选自胺化合物和铵化合物，以及一种水溶性高分子化合物（组分C），该高分子化合物包含10重量％或更多的由下式（1）表示的结构单元I，并且具有50,000或更多且1,500,000或更少的重均分子量；在25°C时的pH值为8.0至12.0。在式（1）中，R1和R2分别独立表示氢、C1至C8烷基或C1至C2羟基烷基，并且R1和R2永远不是两个氢原子。
• POLISHING LIQUID COMPOSITION FOR SILICON WAFERS
  申请人：Kao Corporation

  公开号：EP2444996A1

  公开（公告）日：2012-04-25

  A polishing composition for a silicon wafer, includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unlit (a1) represented by the following general formula (1), a constitutional unit (a2) represented by the following general formula (2), and a constitutional unit (a3) represented by the following general formula (3). The total of the constitutional unit (a3) is 0.001 to 1.5 mol% of all the constitutional units of the macromolecular compound.

  一种用于硅晶片的抛光组合物，包括高分子化合物、研磨剂和水介质。大分子化合物包括由以下通式（1）表示的构型单体（a1）、由以下通式（2）表示的构型单元（a2）和由以下通式（3）表示的构型单元（a3）。结构单元（a3）的总量占该大分子化合物所有结构单元的 0.001 至 1.5 摩尔%。
• METHOD FOR RECLAIMING SEMICONDUCTOR WAFER AND POLISHING COMPOSITION
  申请人：Fujimi Incorporated

  公开号：EP2530706A1

  公开（公告）日：2012-12-05

  Provided is a polishing composition used for polishing a semiconductor wafer surface having a step in order to planarize the wafer surface and thereby reclaiming the semiconductor wafer. The polishing composition contains at least a step eliminating agent, which is adsorbed to the surface of the semiconductor wafer and acts to prevent etching of bottom portion of the step on the wafer surface during polishing. The step eliminating agent is, for example, a water-soluble polymer or a surfactant, and more specifically, a polyvinyl alcohol, a polyvinyl pyrrolidone, a polyethylene glycol, a cellulose, a carboxylic acid surfactant, a sulfonic acid surfactant, a phosphate ester surfactant, or an oxyalkylene polymer.

  本发明提供一种抛光组合物，用于抛光具有台阶的半导体晶片表面，以使晶片表面平面化，从而回收半导体晶片。该抛光组合物至少含有一种台阶消除剂，它吸附在半导体晶片表面，在抛光过程中起到防止晶片表面台阶底部蚀刻的作用。消除台阶剂例如是水溶性聚合物或表面活性剂，更具体地说，是聚乙烯醇、聚乙烯吡咯烷酮、聚乙二醇、纤维素、羧酸表面活性剂、磺酸表面活性剂、磷酸酯表面活性剂或氧亚烷基聚合物。
• POLISHING COMPOSITION, METHOD FOR PRODUCING POLISHING COMPOSITION, AND KIT FOR PREPARING POLISHING COMPOSITION
  申请人：Fujimi Incorporated

  公开号：EP2977423A1

  公开（公告）日：2016-01-27

  Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

  本发明提供了一种抛光组合物，该抛光组合物包含一种水溶性聚合物，该聚合物的分子结构由具有不同 SP 值的多个重复单元种类组成；还提供了一种抛光组合物，该抛光组合物通过规定的方法确定蚀刻率和磨料吸附率时，蚀刻率和磨料吸附率均在规定的范围内。此外，还提供了一种使用研磨剂、碱性化合物、具有碱水解官能团的水溶性聚合物和水生产抛光组合物的方法。该方法包括获得至少包含碱性化合物的制剂 A 的步骤和获得至少包含水溶性聚合物 H 的制剂 B 的步骤。
• POLISHING COMPOSITION, PRODUCTION METHOD FOR POLISHING COMPOSITION, AND PRODUCTION METHOD FOR POLISHED ARTICLE
  申请人：Fujimi Incorporated

  公开号：EP2957613A1

  公开（公告）日：2015-12-23

  The present invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The polishing composition has a volume average particle diameter DA of grains in the polishing composition of 20 nm to 60 nm measured by dynamic light scattering at a concentration equivalent to 0.2 % abrasive content by mass.

  本发明提供了一种由磨料、水溶性聚合物和水组成的抛光组合物。通过动态光散射测量，抛光组合物中颗粒的体积平均粒径 DA 为 20 nm 至 60 nm，浓度相当于 0.2 % 的研磨剂含量（质量百分比）。