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Methyl 3-acetoxyhexanoate | 21188-60-3

中文名称
——
中文别名
——
英文名称
Methyl 3-acetoxyhexanoate
英文别名
methyl 3-acetyloxyhexanoate
Methyl 3-acetoxyhexanoate化学式
CAS
21188-60-3
化学式
C9H16O4
mdl
——
分子量
188.22
InChiKey
ODICPWSNEYHYSJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.3
  • 重原子数:
    13
  • 可旋转键数:
    7
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.78
  • 拓扑面积:
    52.6
  • 氢给体数:
    0
  • 氢受体数:
    4

文献信息

  • Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
    申请人:FUJIFILM Corporation
    公开号:US10031419B2
    公开(公告)日:2018-07-24
    There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.
    本发明提供了一种图案形成方法,包括(i)使用感光树脂组合物或辐射敏感树脂组合物在基底上形成胶片,该组合物包含(A)由于酸的作用而分解,从而改变其相对于显影剂的溶解度的树脂和(C)特定树脂、(ii) 使用含有树脂 (T) 的表层组合物在胶片上形成表层,(iii) 将具有表层的胶片暴露于放 射线或辐射,(iv) 在暴露后对具有表层的胶片进行显影,形成图案。
  • MODIFYING OR ENHANCING A FLAVOR OF FOOD AND BEVERAGE PRODUCTS
    申请人:Tate & Lyle Ingredients Americas LLC
    公开号:EP3554275A1
    公开(公告)日:2019-10-23
  • ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
    申请人:FUJIFILM CORPORATION
    公开号:US20140227636A1
    公开(公告)日:2014-08-14
    Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.
  • PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20160048075A1
    公开(公告)日:2016-02-18
    There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.
  • ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
    申请人:FUJIFILM Corporation
    公开号:US20160372662A1
    公开(公告)日:2016-12-22
    An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.
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表征谱图

  • 氢谱
    1HNMR
  • 质谱
    MS
  • 碳谱
    13CNMR
  • 红外
    IR
  • 拉曼
    Raman
hnmr
mass
cnmr
ir
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  • 峰位数据
  • 峰位匹配
  • 表征信息
Shift(ppm)
Intensity
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Assign
Shift(ppm)
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测试频率
样品用量
溶剂
溶剂用量
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