申请人:——
公开号:US20030089891A1
公开(公告)日:2003-05-15
An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the cleaning composition combines a solvent, a cleaning agent such as a hydroxycarboxylic acid or salt thereof, and at least one antimicrobial agent resulting in a cleaning composition in which microbial growth is inhibited. Examples of suitable antimicrobial agents include a benzoic acid or salt such as potassium or ammonium benzoate, and sorbic acid or salt such as potassium sorbate. The composition is useful for cleaning a wafer and particularly for removing residual particles after a conductive layer has been planarized to a dielectric layer under the conductive layer in a chemical mechanical planarization of a semiconductor wafer with abrasive slurry particles, particularly after a CMP of copper or aluminum films. Use of the cleaning composition advantageously inhibits microbial growth in the cleaning solution and deposition on the cleaned planarized surface.
本发明提供了一种抗菌清洁组合物和清洁半导体基底的方法,特别是在化学机械平面化或抛光之后。在一个实施方案中,清洗组合物将溶剂、清洗剂(如羟基羧酸或其盐)和至少一种抗菌剂结合在一起,形成一种抑制微生物生长的清洗组合物。合适的抗菌剂包括苯甲酸或其盐,如苯甲酸钾或苯甲酸铵,以及山梨酸或其盐,如山梨酸钾。该组合物可用于清洁晶片,特别是在用研磨浆颗粒对半导体晶片进行化学机械平坦化时,尤其是在对铜或铝薄膜进行 CMP 后,将导电层与导电层下的介电层平坦化后,清除残留颗粒。使用这种清洁组合物可以有效抑制清洁溶液中微生物的生长以及在清洁后的平面化表面上的沉积。