2-Hydroxycyclopentyl trifluoromethanesulfonate | 335157-24-9

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-Hydroxycyclopentyl trifluoromethanesulfonate
• 英文别名: (2-hydroxycyclopentyl) trifluoromethanesulfonate
• CAS: 335157-24-9
• 化学式: C₆H₉F₃O₄S
• 分子量: 234.2
• InChiKey: ODMPHPIOLUZIPC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.2
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  72
• 氢给体数：
  1
• 氢受体数：
  7

文献信息

• Compositions comprising cleavable crosslinker and methods
  申请人：3M INNOVATIVE PROPERTIES COMPANY

  公开号：US10351649B2

  公开（公告）日：2019-07-16

  A composition is described comprising a polymer. The polymer comprises polymerized units derived from a cleavable crosslinking monomer. The cleavable crosslinking monomer comprises at least two free-radically polymerizable groups and at least one group having the formula —O—C(R2)(R3)—O—, wherein R2 and R3 are independently hydrogen, alkyl, or aryl. The composition has a Tg no greater than 50° C. In some embodiments, the composition has a storage modulus greater than 3×105 Pa at 25° C. and 1 Hz and may be characterized as a non-tacky polymer. In other embodiments, the composition is a pressure sensitive adhesive. Upon cleavage of at least a portion of the polymerized monomeric units derived from the cleavable crosslinking monomer, the composition exhibits a change in at least one physical property. In another embodiment, the composition comprises a polymer and fragments. The fragments comprise the reaction product of a free-radically polymerizable group bonded to a polymer chain and a pendent hydroxyl group. The composition has a Tg no greater than 50° C. Also described are articles, comprising the composition described herein (i.e. before and/or after cleavage); as well as methods of making the composition and methods of making articles.

  描述了一种由聚合物组成的组合物。该聚合物包含由可裂解交联单体衍生的聚合单元。可裂解交联单体包括至少两个可自由基聚合的基团和至少一个具有式-O-C(R2)(R3)-O-的基团，其中 R2 和 R3 独立地为氢、烷基或芳基。在某些实施方案中，该组合物在 25° C 和 1 Hz 时的储存模量大于 3×105 Pa，并可表征为非粘性聚合物。在其他实施例中，该组合物是一种压敏粘合剂。当由可裂解交联单体衍生的聚合单体单元的至少一部分发生裂解时，组合物显示出至少一种物理性质的变化。在另一个实施方案中，组合物包括聚合物和片段。片段包括与聚合物链键合的可自由基聚合基团和悬垂羟基的反应产物。此外，还描述了由本文所述组合物（即裂解前和/或裂解后）组成的物品；以及组合物的制造方法和物品的制造方法。
• Polymer for organic bottom anti-reflective coating and bottom anti-reflective coatings comprising the same
  申请人：SK Innovation Co., Ltd.

  公开号：US11435667B2

  公开（公告）日：2022-09-06

  Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.

  本发明提供了一种用于有机底部防反射涂层的聚合物和一种含有该聚合物的底部防反射涂层组合物。更具体地说，本发明提供了一种用于有机底部防反射涂层的聚合物，该聚合物能够缓解在制造半导体器件的光刻工艺中涂敷在基底上的光刻胶层的曝光光和照射光在基底上的反射，还提供了一种含有该聚合物的底部防反射涂层组合物。
• COMPOSITIONS COMPRISING CLEAVABLE CROSSLINKER AND METHODS
  申请人：3M Innovative Properties Company

  公开号：EP3134444B1

  公开（公告）日：2022-01-26
• LIGHT ABSORBENT AGENT POLYMER USEFUL FOR ORGANIC ANTI-REFLECTIVE COATING, AND PREPARATION METHOD FOR THE SAME
  申请人：JUNG Jae-chang

  公开号：US20070265406A1

  公开（公告）日：2007-11-15

  Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
• METHOD FOR FORMING A PATTERN ON A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE RESULTING FROM THE SAME
  申请人：JUNG Jae-chang

  公开号：US20080020592A1

  公开（公告）日：2008-01-24

  Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.