Methyl 2-n-propoxyphenyl sulfide | 1443348-64-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: Methyl 2-n-propoxyphenyl sulfide
• 英文别名: 1-methylsulfanyl-2-propoxybenzene
• CAS: 1443348-64-8
• 化学式: C₁₀H₁₄OS
• 分子量: 182.28
• InChiKey: SLAQGJIFCMIDJZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  34.5
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Amino alcohol derivatives
  申请人：SANKYO COMPANY, LIMITED

  公开号：US20030236297A1

  公开（公告）日：2003-12-25

  Compounds of formula (I) which exhibit excellent immune suppression activity, pharmacologically acceptable salts thereof, esters thereof or other derivatives: 1 wherein R 1 and R 2 are a hydrogen atom, an amino protecting group; R 3 is a hydrogen atom, a hydroxy protecting group; R 4 is a lower alkyl group; n is an integer from 1 to 6; X is an ethylene group; Y is a C 1 -C 10 alkylene group, a C 1 -C 10 alkylene group substituted with 1 to 3 substituents selected from substituent group a and b; R 5 is an aryl group; R 6 and R 7 are a hydrogen atom, a group selected from substituent group a; with the proviso when R 5 is a hydrogen atom, Y is not a single bond or a straight chain C 1 -C 10 alkylene group.

  式（I）的化合物表现出优异的免疫抑制活性，其药理学上可接受的盐，酯或其他衍生物：其中R1和R2是氢原子，氨基保护基；R3是氢原子，羟基保护基；R4是较低的烷基基团；n是1到6之间的整数；X是乙烯基团；Y是C1-C10烷基基团，带有1到3个从取代基a和b中选择的取代基的C1-C10烷基基团；R5是芳基基团；R6和R7是氢原子，从取代基a中选择的基团；但是当R5是氢原子时，Y不是单键或直链的C1-C10烷基基团。
• Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10197917B2

  公开（公告）日：2019-02-05

  The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si−C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

  本发明提供了一种用于光刻的抗蚀剂底层成膜组合物，利用可水解硅烷的水解缩合产物形成可用作硬掩膜的抗蚀剂底层膜，该抗蚀剂底层膜还可吸收 KrF 激光。一种用于光刻的抗蚀剂底层成膜组合物，其硅烷成分包括可水解硅烷、其水解产物或其水解缩合产物，其中可水解硅烷包括式（1）的可水解硅烷： R1aR2bSi(R3)4-(a+b) 式(1) [其中 R1 是式 (2) 的有机基团： R3 是烷氧基、酰氧基或卤素基团；a 是 1 的整数；b 是 0 至 2 的整数；a+b 是 1 至 3 的整数]，且整个硅烷中硫原子与硅原子的摩尔比为 7% 或以上。将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。
• Melanocortin subtype-2 receptor (MC2R) antagonists and uses thereof
  申请人：Crinetics Pharmaceuticals, Inc.

  公开号：US10766877B2

  公开（公告）日：2020-09-08

  Described herein are compounds that are melanocortin subtype-2 receptor (MC2R) modulators, methods of making such compounds, pharmaceutical compositions and medicaments comprising such compounds, and methods of using such compounds in the treatment of conditions, diseases, or disorders that would benefit from modulation of MC2R activity.

  本文描述了黑色素皮质素亚型-2 受体（MC2R）调节剂化合物、制造此类化合物的方法、包含此类化合物的药物组合物和药物，以及使用此类化合物治疗可从调节 MC2R 活性中获益的病症、疾病或紊乱的方法。
• Silicon-containing resist underlayer film-forming composition having phenyl group-containing chromophore
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US11175583B2

  公开（公告）日：2021-11-16

  The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

  本发明提供了一种用于光刻的抗蚀剂底层成膜组合物，利用可水解硅烷的水解缩合产物形成可用作硬掩膜的抗蚀剂底层膜，该抗蚀剂底层膜还可吸收 KrF 激光。一种用于光刻的抗蚀剂底层成膜组合物，其硅烷成分包括可水解硅烷、其水解产物或其水解缩合产物，其中可水解硅烷包括式（1）的可水解硅烷： R1aR2bSi(R3)4-(a+b) 式(1) [其中 R1 是式 (2) 的有机基团： R3 是烷氧基、酰氧基或卤素基团；a 是 1 的整数；b 是 0 至 2 的整数；a+b 是 1 至 3 的整数]，且整个硅烷中硫原子与硅原子的摩尔比为 7% 或以上。将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。
• SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170146906A1

  公开（公告）日：2017-05-25

  The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs K.& laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) [where R 1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si−C bond; R 3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.