申请人:Seimi Chemical Co., Ltd.
公开号:EP1235261A1
公开(公告)日:2002-08-28
A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application.
A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.
本发明提供了一种抛光化合物和一种抛光方法,从而在半导体器件生产工艺中的CMP工序中,可以在抛光金属层和/或阻挡层等的同时抑制金属层的过度氧化,并且可以根据应用调整抛光速率。
本发明公开了一种由抛光磨粒和肽组成的抛光化合物、一种将这种抛光化合物悬浮于水性介质(最好与氧化剂一起且 pH 值最好至少为 7)中的抛光化合物浆料,以及一种通过使用支撑有这种抛光化合物浆料的 CMP 设备的砂布对形成于半导体基板上的铜等金属层和/或阻挡层进行抛光的方法。