Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
申请人:Facchetti Antonio
公开号:US20080177073A1
公开(公告)日:2008-07-24
The present teachings provide compounds of formulae I and II:
where Q, R
a
, R
1
, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
Anthracenedicarboximides as Air-Stable N-Channel Semiconductors for Thin-Film Transistors with Remarkable Current On−Off Ratios
作者:Zhiming Wang、Choongik Kim、Antonio Facchetti、Tobin J. Marks
DOI:10.1021/ja073306f
日期:2007.11.1
A new n -type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high I (on)/I (off) ratios. Unoptimized N,N '-di-fD ctyl-9,10-dicyano-2,3:6,7- anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (f(e) = 0.02 cm(2)/(V s)) and very high I (on)/I (off) > 10(7) in ambient conditions.
METHODS FOR PREPARING ARENE-BIS(DICARBOXIMIDE)-BASED SEMICONDUCTING MATERIALS AND RELATED INTERMEDIATES FOR PREPARING SAME