3,4-Bis(t-butoxycarbonylmethyloxy)benzaldehyde

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3,4-Bis(t-butoxycarbonylmethyloxy)benzaldehyde
• 英文别名: Tert-butyl 2-[4-formyl-2-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethoxy]phenoxy]acetate
• 化学式: C₁₉H₂₆O₇
• 分子量: 366.411
• InChiKey: OCRKNCUYZFTMEQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  26
• 可旋转键数：
  11
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.53
• 拓扑面积：
  88.1
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  溴乙酸叔丁酯 、 3,4-二羟基苯甲醛 在 potassium carbonate 作用下， 以 水 、 丙酮 为溶剂， 以99%的产率得到3,4-Bis(t-butoxycarbonylmethyloxy)benzaldehyde
  参考文献：
  名称：

  .gamma.-Diketone compounds with inhibitory activity against platelet

  摘要：

  公开了一种由以下式(I)表示的.gamma.-二酮化合物及其药学上可接受的盐和溶剂，具有血小板聚集抑制活性：##STR1##其中B为--Z--(CH.sub.2).sub.q COOR.sup.7，A为以下的基团(II)或(III)：##STR2##

  公开号：

  US05760053A1

文献信息

• GAMMA-DIKETONE COMPOUND HAVING PLATELET AGGREGATION INHIBITING EFFECT
  申请人：MEIJI SEIKA KABUSHIKI KAISHA

  公开号：EP0738705A1

  公开（公告）日：1996-10-23

  A γ-diketone compound represented by the following formula (I) and a pharmaceutically acceptable salt and solvate thereof having platelet aggregation inhibitory activity is disclosed: wherein B is -Z-(CH2)qCOOR7 and A is the following group (II) or (III):

  本发明公开了由下式（I）代表的具有血小板聚集抑制活性的γ-二酮化合物及其药学上可接受的盐和溶液： 其中 B 是-Z-(CH2)qCOOR7，A 是以下基团(II)或(III)：
• Composition for forming organic film
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11042090B2

  公开（公告）日：2021-06-22

  The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

  本发明提供了一种用于形成有机薄膜的组合物，该组合物含有具有通式(1)至(4)所示的一种或多种重复单元的聚合物化合物，以及一种有机溶剂，该有机溶剂含有一种或多种选自丙二醇酯、酮和内酯的化合物，相对于整个有机溶剂的总浓度超过 30 wt%。可以提供一种组合物，该组合物能够用一种对半导体设备基底和图案化工艺中所需的有机抗蚀剂底层膜无害的去除液，例如半导体制造工艺中常用的一种名为 SC1 的含有过氧化氢的氨水溶液，以湿法形成一种有机膜，该有机膜可以与通过干法蚀刻改性的硅残留物一起容易地去除。
• COMPOSITION FOR FORMING ORGANIC FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190041752A1

  公开（公告）日：2019-02-07

  The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
• RESIST MULTILAYER FILM-ATTACHED SUBSTRATE AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190041753A1

  公开（公告）日：2019-02-07

  The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
• US5760053A
  申请人：——

  公开号：US5760053A

  公开（公告）日：1998-06-02