SILICON PRECURSOR AND METHOD OF MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
申请人:HANSOL CHEMICAL CO., LTD.
公开号:US20210277031A1
公开(公告)日:2021-09-09
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
本发明涉及一种蒸发沉积化合物,能够通过蒸发沉积进行薄膜沉积,特别是一种可用于原子层沉积(ALD)或化学气相沉积(CVD)的硅前体,具有高温沉积能力,并且涉及一种制造含硅薄膜的方法。