methyltrioctylammonium hexanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: methyltrioctylammonium hexanoate
• 英文别名: Hexanoate;methyl(trioctyl)azanium
• 化学式: C₆H₁₁O₂*C₂₅H₅₄N
• 分子量: 483.863
• InChiKey: DFPGKCXVNYGNSZ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  8.83
• 重原子数：
  34
• 可旋转键数：
  24
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.97
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  甲基三辛基氯化铵 、 己酸 在 sodium hydroxide 作用下， 反应 4.0h， 以97%的产率得到methyltrioctylammonium hexanoate
  参考文献：
  名称：

  新型铵离子液体的绿色合成及其作为萃取剂的潜力

  摘要：

  由三辛基甲基氯化铵（Aliquat 336 ©）合成了新的疏水性离子液体，并通过可持续，简单且节省成本的去质子化复分解路线选择了布朗斯台德酸。评估了制备的离子液体作为从不同水溶液中萃取镉的潜在能力。用硫辛基水杨酸三辛基甲基铵[A336] [TS]（一种含硫醇的特定任务离子液体）从天然河流基质中萃取镉达到了高效和选择性。

  DOI：

  10.1016/j.tetlet.2008.02.138

文献信息

• COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
  申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

  公开号：EP1568744A1

  公开（公告）日：2005-08-31

  A composition for film formation from which a porous film excelling in dielectric characteristics, adherence, coating film uniformity and mechanical strength and realizing reduced moisture absorption can be prepared; a porous film and a process for producing the same; and a highly reliable semiconductor device of high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, obtained by adding to a siloxane polymer at least one quaternary ammonium salt represented by the general formula: [(R<1>)4N]<+>[R<2>X]<-> (1), or Hk[(R<1>)4N]m<+>Y (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C-CO2, NO3 or NO2; k is 0 or 1; each of m and n is 1 or 2; when n=1, k=0 and m=1; and when n=2, either k=0 and m=2, or k=1 and m=1.

  一种可制备介电特性、附着力、涂膜均匀性和机械强度优异的多孔膜并实现降低吸湿性的成膜用组合物；一种多孔膜及其生产工艺；以及一种含有该多孔膜的高性能高可靠性半导体器件。特别是一种用于形成多孔薄膜的组合物，它是通过向硅氧烷聚合物中添加至少一种由通式表示的季铵盐而获得的：[(R)4N][RX](1)，或 Hk[(R)4N]mY (2)，其中 X 代表 CO2、OSO3 或 SO3；Y 代表 SO4、SO3、CO3、O2C-CO2、NO3 或 NO2；k 为 0 或 1；m 和 n 各为 1 或 2；当 n=1 时，k=0，m=1；当 n=2 时，或者 k=0，m=2，或者 k=1，m=1。
• Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
  申请人：Matsushita Electric Industrial Co., Ltd.

  公开号：US20040219372A1

  公开（公告）日：2004-11-04

  Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N]+[R 2 X] − (1) H k [(R 1 ) 4 N] m + Y − (2) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=O and m=2, or k=1 and m=1.

  本发明提供了一种可形成介电常数、粘附性、薄膜均匀性、机械强度优异且吸湿性低的多孔薄膜的成膜组合物；多孔薄膜及其成膜方法；以及一种内部包含该多孔薄膜的高性能、高可靠性半导体器件。更具体地说，提供了一种用于形成多孔薄膜的组合物，该组合物包括硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐： [(R 1 ) 4 N]+[R 2 X&rsqb； - (1) H k [(R 1 ) 4 N&rsqb； m &plus； Y - (2) 其中 X 代表 CO 2 、OSO 3 或 SO 3 Y 代表 SO 4 、SO 3 , CO 3 , O 2 C-CO 2 NO 3 或 NO 2 ；且 k 为 0 或 1，m 为 1 或 2，n 为 1 或 2，但条件是 n=1 需要 k=0 和 m=1，n=2 需要 k=O 和 m=2，或 k=1 和 m=1。
• Sankarshana; Rao, M. Bhagvanth; Ramachandran, Journal of the Indian Chemical Society, 2002, vol. 79, # 8, p. 668 - 670
  作者：Sankarshana、Rao, M. Bhagvanth、Ramachandran

  DOI：——

  日期：——
• COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE
  申请人：Ogihara Tsutomu

  公开号：US20070135565A1

  公开（公告）日：2007-06-14

  Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N] + [R 2 X] − ( 1 ) H k [(R 1 ) 4 N] m + Y n− ( 2 ) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.
• US7132473B2
  申请人：——

  公开号：US7132473B2

  公开（公告）日：2006-11-07