The reactions of O(3P) atoms with the silanes Me(4-n)SiH(n) (n = 1-4) have been investigated at room temperature in a discharge flow system with mass spectrometric detection and also in stationary photolysis experiments. Analysis of the end products provided conclusive evidence that the only primary process occurring in each case was the abstraction of hydrogen from the Si-H bond by the O atom leading to the formation of the OH and silyl radicals. The values of the rate constants obtained are k/10(-13) cm3 s-1): k(O + SiH4) = 3.5, k(O + SiD4) = 1.4, k(O + MeSiH3) = 8.9; k(O + Me2SiH2) = 18.0 k(O + Me3SiH) = 30.6, and k(O + Me3SiD) = 16.0. The marked increase in rate constant with methylation is unexpected in view of the known similarity of the Si-H bond dissociation energy in SiH4 and the methylsilanes. A possible explanation is offered in terms of a reaction model involving partial charge transfer from Si to the attacking O, followed by proton transfer.
Kinetic studies and ab initio investigations of the reactions of atomic bromine with methylsilane and dimethylsilane
作者:Luying Ding、Paul Marshall
DOI:10.1039/ft9938900419
日期:——
ca.±13%. Assumed activation energies for the reverse reactions yield Si—H bond dissociation enthalpies, D298, of 388 ± 5 and 392 ± 5 kJ mol–1 in methylsilane and dimethylsilane, respectively. These values and the Arrhenius parameters are intermediate between earlier results for Br + SiH4 and Br +(CH3)3SiH, although the uncertainty in D298 is too great to establish a firm trend in D298 with the degree
Kinetics and mechanism of the reactions of oxygen atoms (3P) with silane, methylsilane, dimethylsilane, and trimethylsilane
作者:O. Horie、R. Taege、B. Reimann、N. L. Arthur、P. Potzinger
DOI:10.1021/j100164a042
日期:1991.5
The reactions of O(3P) atoms with the silanes Me(4-n)SiH(n) (n = 1-4) have been investigated at room temperature in a discharge flow system with mass spectrometric detection and also in stationary photolysis experiments. Analysis of the end products provided conclusive evidence that the only primary process occurring in each case was the abstraction of hydrogen from the Si-H bond by the O atom leading to the formation of the OH and silyl radicals. The values of the rate constants obtained are k/10(-13) cm3 s-1): k(O + SiH4) = 3.5, k(O + SiD4) = 1.4, k(O + MeSiH3) = 8.9; k(O + Me2SiH2) = 18.0 k(O + Me3SiH) = 30.6, and k(O + Me3SiD) = 16.0. The marked increase in rate constant with methylation is unexpected in view of the known similarity of the Si-H bond dissociation energy in SiH4 and the methylsilanes. A possible explanation is offered in terms of a reaction model involving partial charge transfer from Si to the attacking O, followed by proton transfer.