申请人:Xiao Manchao
公开号:US20120128897A1
公开(公告)日:2012-05-24
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:
wherein R
1
is independently selected from hydrogen, a linear or branched C
1
to C
6
alkyl, a linear or branched C
2
to C
6
alkenyl, a linear or branched C
2
to C
6
alkynyl, a C
1
to C
6
alkoxy, a C
1
to C
6
dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R
2
is independently selected from hydrogen, a linear or branched C
1
to C
6
alkyl, a linear or branched C
2
to C
6
alkenyl, a linear or branched C
2
to C
6
alkynyl, a C
1
to C
6
alkoxy, a C
1
to C
6
dialkylamino, a C
6
to C
10
aryl, a linear or branched C
1
to C
6
fluorinated alkyl, and a C
4
to C
10
cyclic alkyl group.
本文描述了制备介电膜的前体和方法。在一个方面,提供了具有以下公式I的硅前体:其中R1是独立选择的氢、线性或支链C1到C6烷基、线性或支链C2到C6烯基、线性或支链C2到C6炔基、C1到C6烷氧基、C1到C6二烷基氨基和电子提取基团,n是从0、1、2、3、4和5中选择的数字;R2是独立选择的氢、线性或支链C1到C6烷基、线性或支链C2到C6烯基、线性或支链C2到C6炔基、C1到C6烷氧基、C1到C6二烷基氨基、C6到C10芳基、线性或支链C1到C6氟代烷基和C4到C10环烷基。