1-adamantan-2-yl propionate

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 1-adamantan-2-yl propionate
• 英文别名: 2-Adamantyl propanoate
• 化学式: C₁₃H₂₀O₂
• 分子量: 208.301
• InChiKey: ZNIRFCZWCJYGEF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  2-金刚烷醇 、 丙酸酐 在 4-二甲氨基吡啶 作用下， 反应 10.0h， 以91%的产率得到1-adamantan-2-yl propionate
  参考文献：
  名称：

  一种沙库必曲的制备方法

  摘要：

  本发明公开了一种沙库必曲及其中间体与手性辅基的制备方法，包括如下合成路线中的步骤1～11：其中，ROH(式X)为手性醇及其类似物，PG为羟基保护基，式VI化合物和式V化合物为本发明的手性辅基。本发明以便宜易得的丙酸酐和手性醇ROH(式X)制备手性辅基式VI化合物和式V化合物，通过手性辅基高效制备高非对映体过量的沙库必曲中间体式XI化合物和式IV化合物，式IV化合物经三步简单的操作步骤，即可制得本发明所述的沙库必曲，整条路线工艺简单，安全环保，对设备无特殊要求，生成成本低，收率高，分对映异构体选择性高，适用于工业生成。

  公开号：

  CN113387829B

文献信息

• OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20200262787A1

  公开（公告）日：2020-08-20

  The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.

  本发明提供了一种包括含碲化合物或含碲树脂的光学元件成型组合物。
• MOLECULAR GLASS PHOTORESISTS CONTAINING BISPHENOL A FRAMEWORK AND METHOD FOR PREPARING THE SAME AND USE THEREOF
  申请人：Yang Guoqiang

  公开号：US20150037735A1

  公开（公告）日：2015-02-05

  The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.

  本发明提供了一类分子玻璃光刻胶（I和II），其主要结构包括双酚A，并提供了它们的制备方法。该分子玻璃光刻胶由光酸发生剂、交联剂、光刻胶溶剂和其他添加剂配制而成，可制备成正向或负向光刻胶。通过旋涂在硅片上形成均匀厚度的光刻胶。该光刻胶配方可用于现代光刻技术，如248纳米光刻、193纳米光刻、极紫外（EUV）光刻、纳米压印光刻、电子束光刻，特别是EUV光刻技术中。
• Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030224297A1

  公开（公告）日：2003-12-04

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，其通式为（1）1，其中L1、L2、L3、L4、L5和L6中的每个都选择自氢原子和碳数为1到8的烷基组成的群，L5和L6的氢原子和/或烷基被具有碳数为1到10的亚烷基替换，并相互键合形成环，以使光刻胶具有高于或等于220纳米波长的光透明度，对干法刻蚀具有较大的抗性，并且对基底有良好的附着力。
• Monomer having fluorine-containing acetalor ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same
  申请人：Maeda Katsumi

  公开号：US20050164119A1

  公开（公告）日：2005-07-28

  As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R 1 and R 2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R 3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.

  本发明提供了一种透明度改善的聚合物，适用于化学放大型光刻胶中使用的抗性树脂，可用于在180纳米或更短波长的曝光光下进行光刻。该聚合物包括由具有聚合活性的单体聚合得到的重复单元，其中该单体具有由通式（1）表示的含氟缩醛或缩酮结构： 其中，R表示含有聚合活性的碳碳双键的原子基团；R1和R2中至少一个是具有1至20个碳原子的含氟烷基或含氟芳基；R3表示从氢原子、烷基、烷氧基取代的烷基、含氟烷基、芳基、含氟芳基、芳基烷基和含氟芳基烷基等基团中选择的一个基团。
• Chemical amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030097008A1

  公开（公告）日：2003-05-22

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo [3.2.1 ]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，该基团由通式（1）表示，其中L1、L2、L3、L4、L5和L6中的每一个均选自于氢原子和碳数为1至8的烷基组成的群体，且在L5和L6处的氢原子和/或烷基被替换为碳数为1至10的亚烷基组，它们彼此相连形成环，以使光刻胶对小于或等于220纳米波长的光具有高透明度，对干法刻蚀具有较大的抵抗力，并且与基底有良好的附着性。