2-(4-ethylbenzyl)-1,1,1,3,3,3-hexafluoropropan-2-ol

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-(4-ethylbenzyl)-1,1,1,3,3,3-hexafluoropropan-2-ol
• 英文别名: 2-[(4-Ethylphenyl)methyl]-1,1,1,3,3,3-hexafluoropropan-2-ol
• 化学式: C₁₂H₁₂F₆O
• 分子量: 286.217
• InChiKey: PFMIYAVGEIBRAC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.4
• 重原子数：
  19
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  乙基苯 、 3,3,3,-三氟-2-(三氟甲基)-1,2-氧化丙烯 在 三氟甲磺酸 作用下， 以 二氯甲烷 为溶剂， 生成 2-(2-ethylbenzyl)-1,1,1,3,3,3-hexafluoropropan-2-ol 、 2-(3-ethylbenzyl)-1,1,1,3,3,3-hexafluoropropan-2-ol 、 2-(4-ethylbenzyl)-1,1,1,3,3,3-hexafluoropropan-2-ol
  参考文献：
  名称：

  在超酸性介质中芳烃与单和双（三氟甲基）环氧乙烷的 Friedel-Crafts 烷基化：α-（三氟甲基）-和 α,α-双（三氟甲基）-β-芳基乙醇的简便合成

  摘要：

  三氟甲磺酸通过开环催化芳烃与单（三氟甲基）环氧乙烷和双（三氟甲基）环氧乙烷的弗瑞德-克来福特烷基化反应，以优异的收率得到 α-（三氟甲基）和 α,α-双（三氟甲基）-β-苯基乙醇。已经发现 - 环氧乙烷开环和随后的 Friedel-Crafts 烷基化的区域选择性取决于环氧乙烷环中 - 取代基的电子和空间效应。DFT 研究表明，C2-O 键比 C1-O 键长，这是由于 CF 3 基团的高吸电子效应影响 C2-O 裂解，导致 C2 亲电中心促进与芳烃上的 C2 中心的亲电取代。

  DOI：

  10.1055/s-2007-977423

文献信息

• PATTERNABLE LOW DIELECTRIC CONSTANT MATERIALS AND THEIR USE IN ULSI INTERCONNECTION
  申请人：Lin Qinghuang

  公开号：US20080063880A1

  公开（公告）日：2008-03-13

  The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.

  本发明涉及超大规模集成（ULSI）互连结构，更具体地涉及适用于ULSI互连结构的可图案化低介电常数（低-k）材料。本发明所披露的可图案化低-k介电材料是具有一种或多种酸敏感可成像功能基团的功能化聚合物。
• SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES
  申请人：Allen Robert D.

  公开号：US20100207276A1

  公开（公告）日：2010-08-19

  The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R 1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R 1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
• AIRGAP-CONTAINING INTERCONNECT STRUCTURE WITH IMPROVED PATTERNABLE LOW-K MATERIAL AND METHOD OF FABRICATING
  申请人：Lin Qinghuang

  公开号：US20100319971A1

  公开（公告）日：2010-12-23

  A method of fabricating an airgap-containing interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material is provided. Specifically, a simplified method of fabricating single-damascene and dual-damascene airgap-containing low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating is provided.
• PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION
  申请人：Lin Qinghuang

  公开号：US20110074044A1

  公开（公告）日：2011-03-31

  An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.
• MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS
  申请人：Lin Qinghuang

  公开号：US20110042790A1

  公开（公告）日：2011-02-24

  A method of double patterning a semiconductor structure with a single material which after patterning becomes a permanent part of the semiconductor structure. More specifically, a method to form a patterned semiconductor structure with small features is provided which are difficult to obtain using conventional exposure lithographic processes. The method of the present invention includes the use of patternable low-k materials which after patterning remain as a low-k dielectric material within the semiconductor structure. The method is useful in forming semiconductor interconnect structures in which the patternable low-k materials after patterning and curing become a permanent element, e.g., a patterned interlayer low-k material, of the interconnect structure.