Gozzo, Fabio Cesar; Sorrilha, Ana Elisa P. M.; Eberlin, Marcos N., Journal of the Chemical Society. Perkin Transactions 2 (2001), 1996, vol. 4, p. 587 - 596
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER
申请人:Asakawa Koji
公开号:US20070138139A1
公开(公告)日:2007-06-21
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):
(in the general formula (1), R
1
is a hydrogen atom or methyl group; R
3
is a cyclic group selected from an alicyclic group and an aromatic group; R
4
is a polar group; R
2
is a group represented by the following general formula (2); and j is 0 or 1):
(in the general formula (2), R
5
is a hydrogen atom or methyl group).
US7208334B2
申请人:——
公开号:US7208334B2
公开(公告)日:2007-04-24
US7445881B2
申请人:——
公开号:US7445881B2
公开(公告)日:2008-11-04
US7714316B2
申请人:——
公开号:US7714316B2
公开(公告)日:2010-05-11
Gozzo, Fabio Cesar; Sorrilha, Ana Elisa P. M.; Eberlin, Marcos N., Journal of the Chemical Society. Perkin Transactions 2 (2001), 1996, vol. 4, p. 587 - 596
作者:Gozzo, Fabio Cesar、Sorrilha, Ana Elisa P. M.、Eberlin, Marcos N.