bis(2,4-dimethyl-phenylsulfonyl)diazomethane

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: bis(2,4-dimethyl-phenylsulfonyl)diazomethane
• 英文别名: bis(2,4-dimethylphenylsulfonyl)diazomethane；Bis-(2,4-dimethyl-benzylsulfonyl)-diazomethan；Bis-2,4-xylylsulfonyldiazomethan；1-[Diazo-(2,4-dimethylphenyl)sulfonylmethyl]sulfonyl-2,4-dimethylbenzene
• 化学式: C₁₇H₁₈N₂O₄S₂
• 分子量: 378.473
• InChiKey: OESYNCIYSBWEQV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4
• 重原子数：
  25
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.24
• 拓扑面积：
  87
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  2,4-二甲基苯硫酚 在 sodium hydroxide 、 对甲苯磺酰叠氮 作用下， 以 乙醇 为溶剂， 生成 bis(2,4-dimethyl-phenylsulfonyl)diazomethane
  参考文献：
  名称：

  Klages,F.; Bott,K., Chemische Berichte, 1964, vol. 97, p. 735 - 740

  摘要：

  DOI：

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• NOVOLAC RESIN AND RESIST FILM
  申请人：DIC Corporation

  公开号：US20180334523A1

  公开（公告）日：2018-11-22

  Provided are a novolac resin having developability, heat resistance, and dry etching resistance, and a photosensitive composition, a curable composition, and a resist film. A novolac resin including, as a repeating unit, a structural moiety represented by Structural Formula (1) or (2): (in the formula, Ar represents an arylene group, R 1 's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, and a halogen atom, m's each independently represent an integer of 1 to 3, and X is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group) in which at least one of X's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

  提供一种具有可开发性、耐热性和干法蚀刻抗性的新戊醛树脂，以及一种光敏组合物、可固化组合物和抗蚀膜。一种新戊醛树脂包括以下结构单元： （在公式中，Ar代表芳基，R 1 分别独立地代表氢原子、烷基、烷氧基和卤素原子中的任意一种，m分别独立地代表1至3的整数，X代表氢原子、三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基硅基中的任意一种），树脂中至少有一个X是三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基硅基中的任意一种。
• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070292768A1

  公开（公告）日：2007-12-20

  A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

  一种光酸发生剂的化学式为（1）。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时，可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。