In one aspect, the invention relates to compounds having the formula:
wherein: Ar, Z, R
3
, R
4
and R
5
are as defined in the specification, or a pharmaceutically acceptable salt thereof. These compounds have AT
1
receptor antagonist activity and neprilysin inhibition activity. In another aspect, the invention relates to pharmaceutical compositions comprising such compounds; methods of using such compounds; and process and intermediates for preparing such compounds.
POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20100099042A1
公开(公告)日:2010-04-22
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R
1
is H, F, methyl or trifluoromethyl, R
2
, R
3
and R
4
are C
1
-C
10
alkyl, alkenyl or oxoalkyl or C
6
-C
18
aryl, aralkyl or aryloxoalkyl, or two of R
2
, R
3
and R
4
may bond together to form a ring with S, A is a C
2
-C
20
hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
Synthesis of N-Substituted Oxazolidines and Morpholines
作者:A. M. Magerramov、M. N. Magerramov、Kh. A. Makhmudova、G. I. Alizade
DOI:10.1007/s11167-005-0502-x
日期:2005.8
A series of N-substituted oxazolidines and morpholines were prepared and characterized.
一系列N-取代的噁唑烷和吗啉被制备并进行了表征。
NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20090061358A1
公开(公告)日:2009-03-05
Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation.
R
1
—COOCH(CF
3
)CF
2
SO
3
+
H
+
(1a)
R
1
—O—COOCH(CF
3
)CF
2
SO
3
−
H
+
(1c)
R
1
is a C
20
-C
50
hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20100143830A1
公开(公告)日:2010-06-10
A sulfonium salt has formula (1) wherein R
1
is a monovalent hydrocarbon group except vinyl and isopropenyl, R
2
, R
3
, and R
4
are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.