Processes for the production of niobium oxides with controlled tantalum content and capacitors made therefrom
申请人:Tagusagawa Yasuhiko Solon
公开号:US20050225927A1
公开(公告)日:2005-10-13
The present invention relates to niobium oxides having a controlled tantalum content and processes for producing such niobium oxides. The tantalum content can be homogenous or heterogeneous and can be obtained using various process, including co-precipitation, impregnation, deposition, and mixing processes. Niobium pentoxide having a controlled tantalum content can further be reduced to niobium monoxide with controlled tantalum content using a single step reduction process, or can first be reduced to niobium-dioxide with controlled tantalum content using a two step process. The niobium monoxide with controlled tantalum content produced according to such processes can exhibit a high surface area and an appropriate morphology, and can be used to make capacitors with a high capacitance and a low leakage current.
本发明涉及具有受控钽含量的铌氧化物及其生产方法。钽含量可以是均匀的或不均匀的,并且可以使用各种工艺获得,包括共沉淀、浸渍、沉积和混合工艺。具有受控钽含量的铌酸五氧化物可以进一步通过单步还原过程还原为具有受控钽含量的铌单氧化物,或者可以先使用两步过程还原为具有受控钽含量的铌二氧化物。根据这些过程生产的具有受控钽含量的铌单氧化物可以表现出高比表面积和适当的形态,并可用于制造具有高电容和低泄漏电流的电容器。