Photoacid generators, chemically amplified resist compositions, and patterning process
申请人:——
公开号:US20030215738A1
公开(公告)日:2003-11-20
Photoacid generators are provided by O-arylsulfonyl-oxime compounds having formula (1) wherein R is H, F, Cl, NO
2
, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is 0 to 4, r′ is 0 to 5, k is 0 to 4, and G′ and G″ are S or —CH═CH—. Chemically amplified resist compositions comprising the photoacid generators have many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, and improved pattern profile after development. Because of high resolution, the compositions are suited for microfabrication, especially by deep UV lithography.
1
提供光酸发生剂的是具有公式(1)的O-芳基磺酰基肟化合物,其中R为H,F,Cl,NO2,烷基或烷氧基,n为0或1,m为1或2,r为0至4,r'为0至5,k为0至4,G'和G"为S或—CH═CH—。包含光酸发生剂的化学增强型抗蚀剂组合物具有许多优点,包括改善分辨率、改善焦点宽度、即使在长期PED上也最小化线宽变化或形状退化,并且在显影后改善图案轮廓。由于具有高分辨率,这些组合物适用于微细制造,特别是通过深紫外光刻。