(6-乙酰氧基-2,5-二甲基己基)乙酸酯 | 89182-68-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 中文名称: (6-乙酰氧基-2,5-二甲基己基)乙酸酯
• 英文名称: 1,6-Diacetoxy-2,5-dimethyl-hexan
• 英文别名: 2,5-Dimethylhexane-1,6-diyl diacetate；(6-acetyloxy-2,5-dimethylhexyl) acetate
• CAS: 89182-68-3
• 化学式: C₁₂H₂₂O₄
• 分子量: 230.304
• InChiKey: YQQPADUOKRFGKM-UHFFFAOYSA-N

物化性质

• 沸点：
  73-74 °C(Press: 0.1 Torr)
• 密度：
  0.982±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  16
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• RESIST UNDERLAYER FILM-FORMING COMPOSITION USING CARBON-OXYGEN DOUBLE BOND
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20210116814A1

  公开（公告）日：2021-04-22

  A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.
• RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING CYCLIC CARBONYL COMPOUND
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20210124268A1

  公开（公告）日：2021-04-29

  A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.
• RESIST UNDERLAYER FILM-FORMING COMPOSITION
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20220229368A1

  公开（公告）日：2022-07-21

  A resist underlayer film forming composition wherein a flat film forms exhibiting high etching resistance, a good dry etching rate ratio and optical constant, has good coverage, and a small difference in film thickness after embedding. Also included are a resist underlayer film using the resist underlayer film forming composition; and a method for producing a semiconductor apparatus. This resist underlayer film forming composition includes: at least one compound of formula (A); at least one polymer of formula (B); and a solvent. (In formula (A), X represents a C2-C50 n-valent organic group, and n Y's represent a C6-C60 aromatic hydrocarbon group having at least one hydroxyl group, n represents an integer of 1-4.) [In formula (B), R1 represents a hydrogen atom or methyl group, and R2 represents at least one group from formulae (B-1) to (B-3). (In formulae (B-1) to (B-3), * represents a bond with an adjacent oxygen atom.)]
• [EN] RESIST UNDERLAYER FILM FORMING COMPOSITION<br/>[FR] COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE DE RÉSERVE<br/>[JA] レジスト下層膜形成組成物
  申请人：NISSAN CHEMICAL CORP

  公开号：WO2020235427A1

  公开（公告）日：2020-11-26

  高いエッチング耐性、良好なドライエッチング速度比及び光学定数を示し、いわゆる段差基板に対しても被覆性が良好で、埋め込み後の膜厚差が小さく、平坦な膜を形成し得るレジスト下層膜形成組成物を提供する。また、当該レジスト下層膜形成組成物を用いたレジスト下層膜、及び半導体装置の製造方法を提供する。下記式（Ａ）で表される化合物の少なくとも一種又は二種以上、下記式（Ｂ）で表される重合体の一種又は二種以上、及び溶剤を含むレジスト下層膜形成組成物。（式（Ａ）中、Ｘは炭素原子数２～５０のｎ価の有機基を表し、ｎ個のＹは、それぞれ独立に、少なくとも１つ以上のヒドロキシル基を有する炭素原子数６～６０の芳香族炭化水素基を表し、ｎは１～４の整数を表す。）［式（Ｂ）中、Ｒ１は水素原子又はメチル基を表し、Ｒ２は下記式（Ｂ－１）～（Ｂ－３）から選ばれる少なくとも一つの基を表す。（式（Ｂ－１）～（Ｂ－３）中、＊は隣接する酸素原子との結合手を表す。）］ とする。
• [EN] COMPOSITION FOR FORMING RESIST UNDERLAYER FILM<br/>[FR] COMPOSITION PERMETTANT DE FORMER UN FILM DE SOUS-COUCHE DE RÉSERVE<br/>[JA] レジスト下層膜形成組成物
  申请人：NISSAN CHEMICAL CORP

  公开号：WO2021070775A1

  公开（公告）日：2021-04-15

  高いエッチング耐性、良好なドライエッチング速度比及び光学定数を示し、いわゆる段差基板に対しても被覆性が良好で、埋め込み後の膜厚差が小さく、平坦な膜を形成し得るレジスト下層膜形成組成物を提供する。また、当該レジスト下層膜形成組成物を用いたレジスト下層膜、並びに半導体装置の製造方法を提供する。下記式（１）で表される部分構造を有する重合体と、溶剤とを含むレジスト下層膜形成組成物。（式中、Ａｒは置換されていても良い炭素数６～２０の芳香族基を表す）