1,1,3,3,3-五氟-2-(特戊酰氧基)丙基-1-磺酸钠 | 911683-72-2

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 中文名称: 1,1,3,3,3-五氟-2-(特戊酰氧基)丙基-1-磺酸钠
• 中文别名: 1,1,3,3,3-五氟-2-特戊酰氧基-1-丙磺酸钠
• 英文名称: sodium 1,1,3,3,3-pentafluoro-2-(pivaloyloxy)propanesulfonate
• 英文别名: Sodium 1,1,3,3,3-pentafluoro-2-(pivaloyloxy)propanesulfonate；sodium;2-(2,2-dimethylpropanoyloxy)-1,1,3,3,3-pentafluoropropane-1-sulfonate
• CAS: 911683-72-2
• 化学式: C₈H₁₀F₅O₅S*Na
• 分子量: 336.212
• InChiKey: QGMGRMGWWNYVQI-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -1.35
• 重原子数：
  20
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  91.9
• 氢给体数：
  0
• 氢受体数：
  10

反应信息

• 作为反应物：
  描述：

  1,1,3,3,3-五氟-2-(特戊酰氧基)丙基-1-磺酸钠 、 1-butyl-2-(2-{3-[2-(1-butyl-1H-benzo[cd]indol-2-ylidene)ethylidene]-2-(4-butoxyphenyl)-5-methyl-cyclohexa-1-en-1-yl}ethenyl)-benzo[cd]indol-1-ium hexafluoroantimonate 以 水 为溶剂， 以90%的产率得到1-butyl-2-(2-{3-[2-(1-butyl-1H-benzo[cd]indol-2-ylidene)ethylidene]-2-(4-butoxyphenyl)-5-methyl-cyclohexa-1-en-1-yl}ethenyl)-benzo[cd]indol-1-ium 1,1,3,3,3-pentafluoro-2-(pivaloyloxy)propanesulfonate
  参考文献：
  名称：

  JP5782797

  摘要：

  公开号：

文献信息

• NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM
  申请人：OHASHI Masaki

  公开号：US20120119171A1

  公开（公告）日：2012-05-17

  A near-infrared absorbing dye has an anion of formula (1) wherein A 1 is H or CF 3 , R 0 is OH or —OC(═O)—R′, and R′ is a monovalent hydrocarbon group. The dye has excellent solvent solubility as well as good optical properties and heat resistance, offering the advantages of easy coating and effective working during film formation. The dye free of heavy metal in its structure is advantageously used in the process of fabricating semiconductor devices.

  一种近红外吸收染料具有如下式（1）的阴离子，其中A1为H或CF3，R0为OH或—OC(═O)—R′，而R′为一价碳氢基团。该染料具有优异的溶剂溶解性以及良好的光学性能和耐热性，提供易于涂覆和在薄膜形成过程中有效工作的优点。该染料在其结构中不含重金属，因此在制造半导体器件的过程中具有优势应用。
• SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHSAWA Youichi

  公开号：US20110008735A1

  公开（公告）日：2011-01-13

  A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficient scission of acid labile groups in chemically amplified positive resist compositions. Because of substantial non-volatility under high vacuum conditions in the EB or EUV lithography, the risk of the exposure tool being contaminated is minimized.

  分子中含有三苯基磺鎵阳离子和亚硫酸盐阴离子的磺鎵盐，在化学增感抗蚀剂组合物中最适合作为光酸发生剂。当暴露于高能辐射时，磺鎵盐会生成磺酸，促进化学增感正向抗蚀剂组合物中酸不稳定基团的高效断裂。由于在电子束或极紫外光刻技术下，磺鎵盐具有相当的非挥发性，因此减少了暴露工具被污染的风险。
• Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern
  申请人：Hatakeyama Jun

  公开号：US20080032231A1

  公开（公告）日：2008-02-07

  Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R 1 CF 2 SO 3 − (R 2 ) 4 N + ,   (1a) as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

  提供了一种用于多层光刻工艺（特别是双层光刻工艺或三层光刻工艺）中形成抗蚀下层材料的方法，其具有中和基板中的胺污染物的功能，从而减少上层光刻胶图案的尾部挂边等有害影响。具体而言，提供了一种用于形成化学增强型光刻胶层下层的材料，包括可交联聚合物和热酸发生剂，该热酸发生剂可以在100℃或更高温度下加热生成酸，并由通式（1a）表示：R1CF2SO3−（R2）4N+，以及由使用该材料形成的抗蚀下层的光刻胶基板。
• Thermal acid generator, resist undercoat material and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070264596A1

  公开（公告）日：2007-11-15

  A thermal acid generator of generating an acid on heating above 100° C. has formula: CF 3 CH(OCOR)CF 2 SO 3 − (R 1 ) 4 N + wherein R is alkyl or aryl, R 1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R 1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

  一种热酸发生剂，其在加热到100℃以上时产生酸，其化学式为：CF3CH（OCOR）CF2SO3−（R1）4N+，其中R为烷基或芳基，R1为氢、烷基、烯基、氧代烷基、芳基、芳基烷基或芳基氧代烷基，或者R1可以结合在一起形成与N相连的环。所产生的磺酸分子内含有酯位，因此可以将较小的酰基与较大的基团结合在其中。该热酸发生剂提供足够的酸强度，由于分子量较高，挥发性较小，并且确保了薄膜形成。在处理废弃的抗蚀液时，它可以转化为低积累化合物。
• Sulfonium salt, resist composition, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US08173354B2

  公开（公告）日：2012-05-08

  A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficient scission of acid labile groups in chemically amplified positive resist compositions. Because of substantial non-volatility under high vacuum conditions in the EB or EUV lithography, the risk of the exposure tool being contaminated is minimized.

  分子中含有三苯基磺鎓阳离子和亚磺酸盐阴离子的磺鎓盐是化学增感抗蚀剂组合物中最适合用作光酸发生剂的。在高能辐射的照射下，磺鎓盐会产生磺酸，从而促进化学增感正向抗蚀剂组合物中酸不稳定基团的高效裂解。由于在EB或EUV光刻术中高真空条件下具有相当的非挥发性，因此减少了曝光工具被污染的风险。